JAJSN97D November   2021  – August 2023 TPSI3050-Q1

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristic Curves
    12. 6.12 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Transmission of the Enable State
      2. 8.3.2 Power Transmission
      3. 8.3.3 Gate Driver
      4. 8.3.4 Modes Overview
      5. 8.3.5 Three-Wire Mode
      6. 8.3.6 Two-Wire Mode
      7. 8.3.7 VDDP, VDDH, and VDDM Undervoltage Lockout (UVLO)
      8. 8.3.8 Power Supply and EN Sequencing
      9. 8.3.9 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Two-Wire or Three-Wire Mode Selection
        2. 9.2.2.2 Standard Enable, One-Shot Enable
        3. 9.2.2.3 CDIV1, CDIV2 Capacitance
        4. 9.2.2.4 RPXFR Selection
        5. 9.2.2.5 CVDDP Capacitance
        6. 9.2.2.6 Gate Driver Output Resistor
        7. 9.2.2.7 Start-up Time and Recovery Time
        8. 9.2.2.8 Supplying Auxiliary Current, IAUX From VDDM
        9. 9.2.2.9 VDDM Ripple Voltage
      3. 9.2.3 Application Curves
      4. 9.2.4 Insulation Lifetime
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Related Links
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 Trademarks
    5. 10.5 静電気放電に関する注意事項
    6. 10.6 用語集
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Application Information

The TPSI3050-Q1 is a fully integrated, isolated switch driver with integrated bias, which when combined with an external power switch, forms a complete isolated solid state relay solution. With a nominal gate drive voltage of 10 V with 1.5/3.0-A peak source and sink current, a large variety of external power switches such as MOSFETs, IGBTs, or SCRs can be chosen to meet a wide range of applications. The TPSI3050-Q1 generates its own secondary bias supply from the power received from its primary side, so no isolated secondary supply bias is required.

The TPSI3050-Q1 supports two modes of operation based on the number of input pins required. In two-wire mode, typically found in driving mechanical relays, controlling the switch requires only two pins and supports a wide voltage range of operation of 6.5 V to 48 V. In three-wire mode, the primary supply of 3 V to 5.5 V is supplied externally, and the switch is controlled through a separate enable. Available in three-wire mode only, the TPSI3050S-Q1 features a one-shot enable for the switch control. This feature is useful for driving SCRs that typically require only one pulse of current to trigger.

The secondary side provides a regulated, floating supply rail of 10 V for driving a large variety of power switches with no need for a secondary bias supply. The TPSI3050-Q1 can support driving single power switch, dual back-to-back, parallel power switches for a variety of AC or DC applications. The TPSI3050-Q1 integrated isolation protection is extremely robust with much higher reliability, lower power consumption, and increased temperature ranges than those found using traditional mechanical relays and optocouplers.

The power dissipation of the TPSI3050-Q1 can be adjusted by an external resistor from the PXFR pin to VSSP. This feature allows for tradeoffs in power dissipation versus power provided on the secondary depending on the needs of the application.