VDDP must be supplied independently
by a low impedance external supply that can deliver the required power. When VDDP
power is present and CE is a logic high, power transfers from the primary side to
the secondary side. Setting the EN pin logic high or low asserts or deasserts VDRV,
thereby enabling or disabling the external switch, respectively. Figure 8-9 shows the basic set-up required for proper operation which requires EN, VDDP, and
VSSP signals. EN may be driven up to 5.5-V which is normally driven from circuitry
on the same rail as VDDP. In this example, the TPSI310x is being used to drive back-to-back MOSFETs in a common-source
configuration. Driving back-to-back MOSFETs is required for AC switching
applications or DC switching where reverse blocking is required. CVDDP
provides the required decoupling capacitance for the VDDP supply. CDIV1
and CDIV2 provide the required decoupling capacitance of the VDDH/VDDM
supply rails to provide peak current to drive the external MOSFETs.
Figure 8-10 shows the basic operation from start up to steady state
conditions.
- At T1: VDDP powers up the device.
FLTn, ALMn, and PGOOD are asserted
low.
- At T2 and T3: TPSI310x begins to transfer power from VDDP
to the secondary side for a fixed burst period (25 μs typical), which begins to
charge up the VDDH and VDDM secondary side rails. Power transfer continues as
long as VDDP is present (and CE remains high). The time required to fully charge
VDDH depends on several factors including the values of VDDP, CDIV1,
CDIV2, the amount of auxiliary load drawn from VDDM, and the
overall power transfer efficiency.
- At T4, T5, and T6: After four
burst periods, the FLTn, ALMn, and
PGOOD are released and begin to reflect their respective status. PGOOD asserts
high if VDDM and VDDH are both above their UVLO thresholds, otherwise remains
asserted low. FLTn and ALMn indicate
the status of their comparator outputs. In this example, since FLTn_CMP and
ALMn_CMP are tied to VSSS, FLTn and
ALMn assert high. The status indicators are always
transferred sequentially in the order of FLTn,
ALMn, and PGOOD with a delay of approximately 400 ns
between each indicator.
- At T7 and T8: EN is asserted high
and VDRV asserts high. Note that VDRV will not assert high until VDDH and VDDM
are both above their UVLO thresholds. Due to latency of the
FLTn, ALMn, and PGOOD indicators,
it is possible that VDRV asserts high prior to PGOOD asserting high.
Figure 8-11
shows start up sequence where VDDP, CE, and EN signals are tied together.
- At T1: VDDP powers up the device. FLTn,
ALMn, and PGOOD are asserted low.
- At T2 and T3: TPSI310x begins to transfer
power from VDDP to the secondary side for a fixed burst period (25 μs typical),
which begins to charge up the VDDH and VDDM secondary side rails.
- At T4: VDRV asserts high when both VDDH and VDDM are above their UVLO
thresholds.
- At T5, T6, and T7: After four burst periods, the FLTn,
ALMn, and PGOOD are released and begin to reflect their
respective status. In this specific example, it is assumed that VDDH and VDDM
rails have charged up beyond their UVLO thresholds under the four burst periods
(100 μs). In this case, due to the PGOOD latency, PGOOD is asserted high after
VDRV is asserted high.
To reduce average power, the TPSI310x transfers power from the primary side to
the secondary side in a burst fashion. The period of the burst is fixed while the
burst on time is determined internally by the control loop regulating the VDDM
voltage. The burst on time is automatically adjusted based upon the status of the
VDDM voltage thereby optimizing power transfer for a given load condition. During
power up, the device operates at the highest power setting. This helps to quickly
charge up the VDDM and VDDH rails.