JAJSNW7A October 2023 – December 2023 TPSM843320
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE | ||||||
IQ(VIN) | VIN operating non-switching supply current | VEN = 1.3 V, VFB = 550 mV, VVIN = 12 V, 1 MHz | 1200 | 1600 | µA | |
ISD(VIN) | VIN shutdown supply current | VEN = 0 V, VVIN = 12 V | 15 | 25 | µA | |
VIN UVLO rising threshold | VIN rising | 3.9 | 4 | 4.1 | V | |
VIN UVLO hysteresis | 150 | mV | ||||
ENABLE AND UVLO | ||||||
VEN(rise) | EN voltage rising threshold | EN rising, enable switching | 1.2 | 1.25 | V | |
VEN(fall) | EN voltage falling threshold | EN falling, disable switching | 1.05 | 1.1 | V | |
VEN(hyst) | EN voltage hysteresis | 100 | mV | |||
EN pin sourcing current | VEN = 1.1 V | 0.4 | 1.5 | µA | ||
EN pin sourcing current | VEN = 1.3 V | 11.6 | µA | |||
INTERNAL LDO BP5 | ||||||
VBP5 | Internal LDO BP5 output voltage | VVIN = 12 V | 4.5 | V | ||
BP5 dropout voltage | VVIN – VBP5, VVIN = 3.8 V | 350 | mV | |||
BP5 short-circuit current limit | VVIN = 12 V | 75 | mA | |||
REFERENCE VOLTAGE | ||||||
VFB | Feedback Voltage | TJ = –40°C to 125°C | 495 | 500 | 505 | mV |
IFB(LKG) | Input leakage current into FB pin | VFB = 500 mV, non-switching, VVIN = 12 V, VEN = 0 V | 1 | nA | ||
SWITCHING FREQUENCY AND OSCILLATOR | ||||||
fSW | Switching frequency | RFSEL = 24.3 kΩ | 450 | 500 | 550 | kHz |
fSW | Switching frequency | RFSEL = 17.4 kΩ | 675 | 750 | 825 | kHz |
fSW | Switching frequency | RFSEL = 11.8 kΩ | 900 | 1000 | 1100 | kHz |
fSW | Switching frequency | RFSEL = 8.06 kΩ | 1350 | 1500 | 1650 | kHz |
fSW | Switching frequency | RFSEL = 4.99 kΩ | 1980 | 2200 | 2420 | kHz |
SYNCHRONIZATION | ||||||
VIH(sync) | High-level input voltage | 1.8 | V | |||
VIL(sync) | Low-level input voltage | 0.8 | V | |||
SOFT-START | ||||||
tSS1 | Soft-start time | RMODE = 1.78 kΩ | 0.5 | ms | ||
tSS2 | Soft-start time | RMODE = 2.21 kΩ | 1 | ms | ||
tSS3 | Soft-start time | RMODE = 2.74 kΩ | 2 | ms | ||
tSS4 | Soft-start time | RMODE = 3.32 kΩ | 4 | ms | ||
POWER STAGE | ||||||
RDS(on)HS | High-side MOSFET on-resistance | TJ = 25°C, VVIN = 12 V, VBOOT-SW = 4.5 V | 25 | mΩ | ||
RDS(on)LS | Low-side MOSFET on-resistance | TJ = 25°C, VBP5 = 4.5 V | 13.9 | mΩ | ||
VVIN(TH_r) | VIN throttle rising threshold(2) | TJ = 25°C. Weaken high-side gate drive upon VIN rising | 15.7 | 16 | 16.3 | V |
VBOOT-SW(UV_r) | BOOT-SW UVLO rising threshold | VBOOT-SW rising | 3.2 | V | ||
VBOOT-SW(UV_f) | BOOT-SW UVLO falling threshold | VBOOT-SW falling | 2.8 | V | ||
TON(min) | Minimum ON pulse width | IOUT > ½ IL_PK-PK | 30 | 37 | ns | |
TOFF(min) | Minimum OFF pulse width (1) | 115 | 140 | ns | ||
CURRENT SENSE AND OVERCURRENT PROTECTION | ||||||
IOC_HS_pk1 | High-side peak current limit(3A) | RMODE = 1.78 kΩ | 4.6 | 4.9 | 5.1 | A |
IOC_HS_pk2 | High-side peak current limit(3A) | RMODE = 22.1 kΩ | 2.9 | 3.3 | 3.5 | A |
IOC_LS_src1 | Low-side sourcing current limit(3A) | RMODE = 1.78 kΩ | 3.8 | 4.2 | 4.5 | A |
IOC_LS_src2 | Low-side sourcing current limit(3A) | RMODE = 22.1 kΩ | 2.7 | 3.0 | 3.3 | A |
IOC_LS_snk | Low-side sinking current limit | Current into SW pin | 1.9 | A | ||
OUTPUT OVERVOLTAGE AND UNDERVOLTAGE PROTECTIONS | ||||||
VOVP | Overvoltage-protection (OVP) threshold voltage | VFB rising | 120 | % VREF | ||
VUVP | Undervoltage-protection (UVP) threshold voltage | VFB falling | 80 | % VREF | ||
POWER GOOD | ||||||
PGOOD threshold | VFB rising (Fault) | 113 | 116 | 119 | % VREF | |
PGOOD threshold | VFB falling (Good) | 105 | 108 | 111 | % VREF | |
PGOOD threshold | VFB rising (Good) | 89 | 92 | 95 | % VREF | |
PGOOD threshold | VFB falling (Fault) | 81 | 84 | 87 | % VREF | |
IPGOOD(LKG) | Leakage current into PGOOD pin when open drain output is high | VPGOOD = 4.7 V | 5 | µA | ||
VPG(low) | PGOOD low-level output voltage | IPGOOD = 2 mA, VIN = 12 V | 0.5 | V | ||
Min VIN for valid PGOOD output | 0.9 | 1 | V | |||
HICCUP | ||||||
Hiccup time before re-start | 7*tSS | ms | ||||
OUTPUT DISCHARGE | ||||||
RDischg | Output discharge resistance | VVIN = 12 V, VSW = 0.5 V, power conversion disabled. | 100 | Ω | ||
THERMAL SHUTDOWN | ||||||
TSDN | Thermal shutdown threshold (1) | Temperature rising | 165 | 175 | °C | |
THYST | Thermal shutdown hysteresis (1) | 12 | °C |