JAJSD45 データシート

JAJSD45B December 2016 – July 2017 TPSM84A22

PRODUCTION DATA.

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）

MOJ|20
- MPQF470

サーマルパッド・メカニカル・データ

発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VIN	–0.3	15	V
	EN/UVLO	–0.3	7	V
	PGOOD, SYNC, VG	–0.3	6	V
	ILIM, VADJ, VS+	–0.3	3	V
	PGND	–0.3	0.3	V
Output voltage	VOUT	–0.3	3	V
Source current	EN/UVLO		100	µA
Sink current	VG		100	mA
Sink current	PGOOD		4	mA
Mechanical shock	Mil-STD-883D, Method 2002.3, 1 msec, 1/2 sine, mounted		500	G
Mechanical vibration	Mil-STD-883D, Method 2007.2, 20-2000Hz		20	G
Operating IC junction temperature, T_J ⁽²⁾		–40	125	°C
Operating ambient temperature, T_A ⁽²⁾		–40	85	°C
Storage temperature, T_stg		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The ambient temperature is the air temperature of the surrounding environment. The junction temperature is the temperature of the internal power IC when the device is powered. Operating below the maximum ambient temperature, as shown in the safe operating area (SOA) curves, ensures that the maximum junction temperature of any component inside the module is never exceeded.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2500	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input voltage	8	14	V
V_OUT	Output voltage	1.2	2.05	V
V_VG	Gate drive voltage	5.0	5.5	V
V_EN	EN voltage	0	5.5	V
V_PGOOD	PGOOD pull-up voltage	0	5.5	V
V_SYNC	SYNC voltage	0	5.5	V
I_OUT	Output current	0	10	A
T_J	Operating IC junction temperature ⁽¹⁾	–40	125	°C
T_A	Operating ambient temperature ⁽¹⁾	–40	85	°C

(1) The ambient temperature is the air temperature of the surrounding environment. The junction temperature is the temperature of the internal power IC when the device is powered. Operating below the maximum ambient temperature, as shown in the safe operating area (SOA) curves, ensures that the maximum junction temperature of any component inside the module is never exceeded.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPSM84A22	UNIT
		MOJ (QFM)
		20 PINS
R_θJA	Junction-to-ambient thermal resistance ⁽²⁾	14.9	°C/W
ψ_JT	Junction-to-top characterization parameter ⁽³⁾	2.2	°C/W
ψ_JB	Junction-to-board characterization parameter ⁽⁴⁾	5.7	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

(2) The junction-to-ambient thermal resistance, Θ_JA, applies to devices soldered directly to a 50 mm x 100 mm double-sided PCB with 2 oz. copper and natural convection cooling. Additional airflow reduces Θ_JA.

(3) The junction-to-top board characterization parameter, Θ_JT, estimates the junction temperature, T_J, of a device in a real system, using a procedure described in JESD51-2A (section 6 and 7). T_J = ψ_JT * Pdis + T_T; where Pdis is the power dissipated in the device and T_T is the temperature of the top of the device.

(4) The junction-to-board characterization parameter, ψ_JB, estimates the junction temperature, T_J, of a device in a real system, using a procedure described in JESD51-2A (sections 6 and 7). T_J = ψ_JB * Pdis + T_B; where Pdis is the power dissipated in the device and T_B is the temperature of the board 1mm from the device.

6.5 Electrical Characteristics

Over –40ºC to +85°C free-air temperature range, V_IN = 12 V, V_OUT = 1.5 V, I_OUT = I_OUT max, F_SW = 4 MHz,
External C_IN = 2 × 22 µF 25 V 1210 ceramic plus 1 × 100 µF electrolytic (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT VOLTAGE (VIN)
V_IN	VIN input voltage range	Over V_OUT range		8⁽²⁾		14	V
V_{IN_UVLO}	VIN under voltage lock out	V_IN increasing			7.65	7.95	V
V_{IN_UVLO}	VIN under voltage lock out	V_IN decreasing			7.4		V
V_{IN_HYS}	VIN UVLO hysteresis				250		mV
I_{VIN_EN}	VIN standby current	EN = 0 V			47		µA
OUTPUT VOLTAGE (VOUT)
V_OUT(ADJ)	Output voltage adjust range	Over I_OUT range		1.2		2.05	V
V_OUT	Set-point voltage tolerance	V_OUT = 1.5 V, T_A = 25°C, I_OUT = 0 A		-1.0%		+1.0%⁽¹⁾
	Temperature variation	V_OUT = 1.5 V, –40°C ≤ T_A ≤ 85°C, I_OUT = 0 A			±0.2%⁽³⁾
	Line regulation	V_OUT = 1.5 V, over V_IN range, I_OUT = 0 A, T_A = 25°C			±0.03%
	Load regulation	V_OUT = 1.5 V, over I_OUT range, T_A = 25°C			±0.1%
V_OUT Ripple	Output voltage ripple	20 MHz bandwidth, peak-to-peak			9		mV
OUTPUT CURRENT
I_OUT	Output current	See SOA graph for derating over temperature.		0		10	A
	Overcurrent threshold	ILIM = open			15		A
	Overcurrent threshold	ILIM = 47 kΩ			11.25		A
PERFORMANCE
ƞ	Efficiency⁽³⁾	V_IN = 12 V, I_OUT = 5 A	V_OUT = 1.2 V, VG = open		84.2%
			V_OUT = 1.2 V, VG = 5 V		86.2%
			V_OUT = 1.5 V, VG = open		85.7%
			V_OUT = 1.5 V, VG = 5 V		87.5%
			V_OUT = 1.8 V, VG = open		87.4%
			V_OUT = 1.8 V, VG = 5 V		89.0%
	Transient response⁽³⁾	1 A/µs load step, 25% to 75% IOUT(max), COUT= 0 µF	VOUT over/undershoot		15		mV
		1 A/µs load step, 25% to 75% IOUT(max), COUT= 0 µF	Recovery time		10		µs
		5 A/µs load step, 25% to 75% IOUT(max), COUT= 0 µF	VOUT over/undershoot		30		mV
		5 A/µs load step, 25% to 75% IOUT(max), COUT= 0 µF	Recovery time		10		µs
SOFT START
T_SS	Internal soft start time⁽³⁾				4.1		ms
INTERNAL REGULATOR (VG)
V_VG	VG pin output voltage			4.4	4.8	5.0	V
ENABLE AND UNDER-VOLTAGE LOCK-OUT (EN/UVLO)
V_EN	EN threshold range			1.17	1.23	1.27	V
I_EN	Input current	EN threshold + 50 mV			–4		µA
I_EN	Hysteresis current	EN threshold – 50 mV			–1		µA
POWER GOOD (PGOOD)
V_PGOOD	PGOOD thresholds⁽³⁾	V_VOUT falling (Fault)			89%
		V_VOUT rising (Good)			95%
		V_VOUT rising (Fault)			109%
		V_VOUT falling (Good)			104%
	Minimum V_IN for valid PGOOD⁽³⁾	V_PGOOD ≤ 0.5 V at 100 µA			1.2	2.75	V
	PGOOD low voltage	I_PGOOD = 1.7 mA			0.25	0.3	V
THERMAL SHUTDOWN
	Thermal shutdown threshold				135		°C
	Thermal shutdown hysteresis				20		°C
CAPACITANCE
C_IN	External input capacitance	Ceramic type		0 ⁽⁴⁾	44		µF
C_IN	External input capacitance	Non-ceramic type		0 ⁽⁴⁾	100		µF
C_OUT	External output capacitance	Ceramic type		0 ⁽⁵⁾		1000⁽⁶⁾	µF
		Non-ceramic type		0 ⁽⁵⁾		2200⁽⁶⁾	µF
		Equivalent series resistance (ESR)				35	mΩ

(1) The stated limit of the set-point tolerance includes the tolerance of both the internal voltage reference and the internal adjustment resistor. The overall output voltage tolerance will be affected by the tolerance of the external R_SET resistor.

(2) The minimum VIN is 8V or (VOUT x 5.3), whichever is greater.

(3) Specified by design. Not production tested.

(4) Internal to the device, 14.2 µF (nominal) ceramic input capacitance is present. This device does not require additional input capacitance. If adding additional input capacitance, locate the capacitors close to the device.

(5) Internal to the device, 135 µF (nominal) ceramic output capacitance is present. This device does not require additional output capacitance to operate. Adding additional output capacitance near the load improves the response of the device to load transients.

(6) The maximum output capacitance listed in the table is the maximum amount that has been tested and validated for proper start-up, stability, and transient response. It may be possible to operate with additional output capacitance, however, additional validation is required.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
FREQUENCY AND SYNCHRONIZATION (SYNC) ⁽¹⁾
F_SW	Switching frequency	SYNC = open	3.7	4	4.3	MHz
F_SYNC	Synchronization frequency range	SYNC control	3.6		4.4	MHz
V_SYNC-H	SYNC high threshold		2.0			V
V_SYNC-L	SYNC low threshold				0.8	V
D_SYNC	SYNC duty cycle		20%		80%

(1) Specified by design. Not production tested.

6.7 Package Specifications

TPSM84A22		VALUE	UNIT
Weight		0.91	grams
Flammability	Meets UL 94 V-O
MTBF Calculated Reliability	Per Bellcore TR-332, 50% stress, T_A = 40°C, ground benign	30.6	MHrs

6.8 Typical Characteristics

The electrical characteristic data has been developed from actual products tested at 25°C. This data is considered typical for the converter. Applies to Figure 1, Figure 2, Figure 3, Figure 4 and Figure 11.

The temperature derating curves represent the conditions at which internal components are at or below the manufacturer's maximum operating temperatures. Derating limits apply to devices soldered directly to a 50 mm × 100 mm double-sided PCB with 2 oz. copper. Applies to Figure 5 and Figure 6.