SLASE37A May   2014  – December 2014 TRF37A32 , TRF37B32 , TRF37C32

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics, TRF37A32
    6. 7.6  Electrical Characteristics, TRF37B32
    7. 7.7  Electrical Characteristics, TRF37C32
    8. 7.8  Timing Requirements
    9. 7.9  Typical Characteristics (TRF37A32)
    10. 7.10 Typical Characteristics (TRF37B32)
    11. 7.11 Typical Characteristics (TRF37C32)
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Low Power Mode
      2. 8.3.2 Power Down
      3. 8.3.3 Single Ended RF Input
      4. 8.3.4 Single Ended LO Input
      5. 8.3.5 IF Amplifier
    4. 8.4 Device Functional Modes
      1. 8.4.1 Low Power Mode
      2. 8.4.2 Single Channel and Shutdown Modes
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Power Level
        2. 9.2.2.2 Matching
        3. 9.2.2.3 RF Input Component Selection
        4. 9.2.2.4 IF Output Component Selection
        5. 9.2.2.5 Frequency Planning
        6. 9.2.2.6 Control Terminal Transients
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Power Up Sequence
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Input voltage –0.3 3.6 V
Storage temperature, TSTG –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except XIFOUTAP, IFOUTAN, IFOUTBP, and IFOUTBN ±2500 V
Pins XIFOUTAP, IFOUTAN, IFOUTBP, and IFOUTBN (2) ±100
Charged-device model (CDM), per JEDEC specification JESD22-C101(3) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) High Linearity IFOUT pins are susceptible to low voltage HBM damage.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Operating virtual junction temperature range, TJ –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) RTV UNIT
32 PINS
RθJA Junction-to-ambient thermal resistance 32.3 °C/W
RθJCtop Junction-to-case (top) thermal resistance 19.8
RθJB Junction-to-board thermal resistance 5.9
ψJT Junction-to-top characterization parameter 0.2
ψJB Junction-to-board characterization parameter 5.9
RθJCbot Junction-to-case (bottom) thermal resistance 1.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics, TRF37A32

TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC Parameters
VCC Supply Voltage 3.15 3.3 3.45 V
ICC Supply Current FLO = 750 MHz 280 mA
Pdiss Total Power Dissipation FLO = 750 MHz 0.92 W
Power Down Current 2 mA
RF Frequency Range
FRF Frequency Range 400 1700 MHz
RF Specifications
G Gain FRF = 950 MHz (LSI) 9.6 dB
Gvar Gain Variation over Frequency within any 200 MHz Band 0.5 dB
NF SSB Noise Figure FRF = 950 MHz (LSI) 9.6 dB
SSB Noise Figure with Blocker 5 dBm blocker signal
Δf > 50 MHz		 17 dB
IIP3 Input 3rd Order Intercept Point FRF = 950 MHz (LSI),
Fspacing = 20 MHz		 26 dBm
OIP3 Output 3rd Order Intercept Point FRF = 950 MHz (LSI),
Fspacing = 20 MHz		 35.6 dBm
OIP2 Output 2nd Order Intercept Point FRF = 950 MHz (LSI) 65 dBm
IP1dB Input 1 dB Compression Point FRF = 950 MHz (LSI) 11 dBm
ZIN Input Impedance 50 Ω
RLi Input Return Loss FRF = 800 - 1400 MHz (LSI) 15 dB
LO Input
PLO LO Drive Level –3 0 6 dBm
FLO LO Frequency Range 600 1400 MHz
ZIN Input Impedance 50 Ω
RLi Input Return Loss FRF = 750 - 1150 MHz 15 dB
Low Power Mode: LPM = 1
ICC Supply Current FLO = 750 MHz 200 mA
Pdiss Total Power Dissipation FLO = 750 MHz 0.66 W
G Gain FRF = 950 MHz (LSI) 9.2 dB
NF SSB Noise Figure FRF = 950 MHz (LSI) 9.6 dB
IIP3 Input 3rd Order Intercept Point FRF = 950 MHz (LSI),
Fspacing = 20 MHz		 26 dBm
IP1dB Input 1 dB Compression Point FRF = 950 MHz (LSI) 11 dBm
Isolation
Channel Isolation Drive RFinA/B
IFoutA/B-IFoutB/A
FRF = 950 MHz		 50 dB
RF to IF Isolation FRF = 950 MHz 20 dB
LO to RF Leakage PLO = 0 dBm –55 dBm
LO to IF Leakage PLO = 0 dBm –45 dBm
Spurious
2x2 Spurious Product 2RF - 2LO 65 dBc
3x3 Spurious Product 3RF - 3LO 70 dBc
IF Output
ZL Differential Output Impedance Load 200 Ω
FIF Frequency Range 1 dB corner frequency 30 600 MHz
DC Bias Range Externally supplied DC bias through RF choke 3.3 V

7.6 Electrical Characteristics, TRF37B32

TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC Parameters
VCC Supply Voltage 3.15 3.3 3.45 V
ICC Supply Current FLO = 1750 MHz 305 mA
Pdiss Total Power Dissipation FLO = 1750 MHz 1 W
Power Down Current 2 mA
RF Frequency Range
FRF Frequency Range 700 2700 MHz
RF Specifications
G Gain FRF = 1950 MHz (LSI) 10 dB
Gvar Gain Variation over Frequency within any 200 MHz Band 0.5 dB
NF SSB Noise Figure FRF = 1950 MHz (LSI) 9.2 dB
SSB Noise Figure with Blocker 5 dBm blocker signal
Δf > 50 MHz		 15.5 dB
IIP3 Input 3rd Order Intercept Point FRF = 1950 MHz (LSI),
Fspacing = 20 MHz		 32 dBm
OIP3 Output 3rd Order Intercept Point FRF = 1950 MHz (LSI),
Fspacing = 20 MHz		 42 dBm
OIP2 Output 2nd Order Intercept Point FRF = 1950 MHz (LSI) 70 dBm
IP1dB Input 1 dB Compression Point FRF = 1950 MHz (LSI) 10.8 dBm
ZIN Input Impedance 50 Ω
RLi Input Return Loss FRF = 1700 - 2700 MHz (LSI) 10 dB
LO Input
PLO LO Drive Level –3 0 6 dBm
FLO LO Frequency Range 500 2900 MHz
ZIN Input Impedance 50 Ω
RLi Input Return Loss FRF = 1500 - 2450 MHz 15 dB
Low Power Mode: LPM = 1
ICC Supply Current FLO = 1750 MHz 220 mA
Pdiss Total Power Dissipation FLO = 1750 MHz 0.73 W
G Gain FRF = 1950 MHz (LSI) 9.2 dB
NF SSB Noise Figure FRF = 1950 MHz (LSI) 9.2 dB
IIP3 Input 3rd Order Intercept Point FRF = 1950 MHz (LSI),
Fspacing = 20 MHz		 23 dBm
IP1dB Input 1 dB Compression Point FRF = 1950 MHz (LSI) 10.7 dBm
Isolation
Channel Isolation Drive RFinA/B
IFoutA/B-IFoutB/A
FRF = 1950 MHz		 45 dB
RF to IF Isolation FRF = 1950 MHz 22 dB
LO to RF Leakage PLO = 0 dBm –50 dBm
LO to IF Leakage PLO = 0 dBm –42 dBm
Spurious
2x2 Spurious Product 2RF - 2LO 70 dBc
3x3 Spurious Product 3RF - 3LO 75 dBc
IF Output
ZL Differential Output Impedance Load 200 Ω
FIF Frequency Range 1 dB corner frequency 30 600 MHz
DC Bias Range Externally supplied DC bias through RF choke 3.3 V

7.7 Electrical Characteristics, TRF37C32

TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC Parameters
VCC Supply Voltage 3.15 3.3 3.45 V
ICC Supply Current FLO = 2300 MHz 325 mA
Pdiss Total Power Dissipation FLO = 2300 MHz 1.1 W
Power Down Current 2 mA
RF Frequency Range
FRF Frequency Range 1700 3800 MHz
RF Specifications
G Gain FRF = 2500 MHz (LSI) 9.8 dB
Gvar Gain Variation over Frequency within any 200 MHz Band 0.5 dB
NF SSB Noise Figure FRF = 2500 MHz (LSI) 9.9 dB
SSB Noise Figure with Blocker 5 dBm blocker signal
Δf > 50 MHz		 17.5 dB
IIP3 Input 3rd Order Intercept Point FRF = 2500 MHz (LSI)
Fspacing = 20 MHz		 29 dBm
OIP3 Output 3rd Order Intercept Point FRF = 2500 MHz (LSI)
Fspacing = 20 MHz		 38.8 dBm
OIP2 Output 2nd Order Intercept Point FRF = 2500 MHz (LSI) 65 dBm
IP1dB Input 1 dB Compression Point FRF = 2500 MHz (LSI) 11.5 dBm
ZIN Input Impedance 50 Ω
RLi Input Return Loss 8 dB
LO Input
PLO LO Drive Level –3 0 6 dBm
FLO LO Frequency Range 1500 3600 MHz
ZIN Input Impedance 50 Ω
RLi Input Return Loss FRF = 2800 - 3400 MHz 10 dB
Low Power Mode: LPM = 1
ICC Supply Current FLO = 2300 MHz 230 mA
Pdiss Total Power Dissipation FLO = 2300 MHz 0.76 W
G Gain FRF = 2500 MHz (LSI) 9.2 dB
NF SSB Noise Figure FRF = 2500 MHz (LSI) 9.9 dB
IIP3 Input 3rd Order Intercept Point FRF = 2500 MHz (LSI),
Fspacing = 20 MHz		 22 dBm
IP1dB Input 1 dB Compression Point FRF = 2500 MHz (LSI) 11.5 dBm
Isolation
Channel Isolation Drive RFinA/B
IFoutA/B-IFoutB/A
FRF = 2500 MHz		 48 dB
RF to IF Isolation FRF = 2500 MHz 21 dB
LO to RF Leakage PLO = 0 dBm –55 dBm
LO to IF Leakage PLO = 0 dBm –45 dBm
Spurious
2x2 Spurious Product 2RF - 2LO 65 dBc
3x3 Spurious Product 3RF - 3LO 70 dBc
IF Output
ZL Differential Output Impedance Load 200 Ω
FIF Frequency Range 1 dB corner frequency 30 600 MHz
DC Bias Range Externally supplied DC bias through RF choke 3.3 V

7.8 Timing Requirements

MIN TYP MAX UNIT
Power Control
PD Turn-on Time PD = low to 90% final output power 100 ns
Turn-off Time PD = high to initial output power –30 dB 100 ns

7.9 Typical Characteristics (TRF37A32)

TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
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Figure 1. Gain vs Frequency over H/LSI, LPM
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Figure 3. NF vs Frequency over H/LSI, LPM
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Figure 5. OIP2 vs Frequency over H/LSI, LPM
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Figure 7. Gain vs IF Frequency over H/LSI
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Figure 9. NF vs IF Frequency over H/LSI
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Figure 11. LO-IF/RF Leakage vs Frequency
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Figure 13. Gain vs Frequency over Temperature (HSI/LSI)
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Figure 15. IIP3 vs Frequency over Temperature (HSI/LSI)
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Figure 17. NF vs Frequency over Temperature (HSI/LSI)
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Figure 19. Input P1dB vs Frequency over Temperature (HSI/LSI)
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Figure 21. OIP2 vs Frequency over Temperature (HSI/LSI)
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Figure 23. 2 x 2 Spurious over Temperature (H/LSI)
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Figure 2. IIP3 vs Frequency over H/LSI, LPM
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Figure 4. Input P1dB vs Frequency over H/LSI, LPM
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Figure 6. Power Dissipation vs Temperature, LPM
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Figure 8. IIP3 vs IF Frequency over H/LSI
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Figure 10. OIP2 vs IF Frequency over H/LSI
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Figure 12. A-B Channel and RF-IF Isolation
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Figure 14. Gain vs Frequency over LO Drive (H/LSI)
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Figure 16. IIP3 vs Frequency over LO Drive (H/LSI)
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Figure 18. NF vs Frequency over LO Drive (H/LSI)
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Figure 20. RF/LO Input Return Loss
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Figure 22. OIP2 vs Frequency over LO Drive (H/LSI)
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Figure 24. 3 x 3 Spurious over Temperature (H/LSI)

7.10 Typical Characteristics (TRF37B32)

TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
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Figure 25. Gain vs Frequency over H/LSI, LPM
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Figure 27. NF vs Frequency over H/LSI, LPM
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Figure 29. OIP2 vs Frequency over H/LSI, LPM
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Figure 31. Gain vs IF Frequency over H/LSI
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Figure 33. NF vs IF Frequency over H/LSI
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Figure 35. LO-IF/RF Leakage vs Frequency
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Figure 37. Gain vs Frequency over Temperature (HSI/LSI)
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Figure 39. IIP3 vs Frequency over Temperature (HSI/LSI)
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Figure 41. NF vs Frequency over Temperature (HSI/LSI)
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Figure 43. Input P1dB vs Frequency over Temperature (HSI/LSI)
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Figure 45. OIP2 vs Frequency over Temperature (HSI/LSI)
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Figure 47. 2 x 2 Spurious over Temperature (H/LSI)
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Figure 26. IIP3 vs Frequency over H/LSI, LPM
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Figure 28. Input P1dB vs Frequency over H/LSI, LPM
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Figure 30. Power Dissipation vs Temperature, LPM
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Figure 32. IIP3 vs IF Frequency over H/LSI
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Figure 34. OIP2 vs IF Frequency over H/LSI
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Figure 36. A-B Channel and RF-IF Isolation
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Figure 38. Gain vs Frequency over LO Drive (H/LSI)
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Figure 40. IIP3 vs Frequency over LO Drive (H/LSI)
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Figure 42. NF vs Frequency over LO Drive (H/LSI)
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Figure 44. RF/LO Input Return Loss
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Figure 46. OIP2 vs Frequency over LO Drive (H/LSI)
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Figure 48. 3 x 3 Spurious over Temperature (H/LSI)

7.11 Typical Characteristics (TRF37C32)

TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
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Figure 49. Gain vs Frequency over H/LSI, LPM
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Figure 51. NF vs Frequency over H/LSI, LPM
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Figure 53. OIP2 vs Frequency over H/LSI, LPM
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Figure 55. Gain vs IF Frequency over H/LSI
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Figure 57. NF vs IF Frequency over H/LSI
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Figure 59. LO-IF/RF Leakage vs Frequency
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Figure 61. Gain vs Frequency over Temperature (HSI/LSI)
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Figure 63. IIP3 vs Frequency over Temperature (HSI/LSI)
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Figure 65. NF vs Frequency over Temperature (HSI/LSI)
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Figure 67. Input P1dB vs Frequency over Temperature (HSI/LSI)
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Figure 69. OIP2 vs Frequency over Temperature (HSI/LSI)
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Figure 71. 2 x 2 Spurious over Temperature (H/LSI)
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Figure 50. IIP3 vs Frequency over H/LSI, LPM
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Figure 52. Input P1dB vs Frequency over H/LSI, LPM
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Figure 54. Power Dissipation vs Temperature, LPM
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Figure 56. IIP3 vs IF Frequency over H/LSI
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Figure 58. OIP2 vs IF Frequency over H/LSI
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Figure 60. A-B Channel and RF-IF Isolation
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Figure 62. Gain vs Frequency over LO Drive (H/LSI)
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Figure 64. IIP3 vs Frequency over LO Drive (H/LSI)
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Figure 66. NF vs Frequency over LO Drive (H/LSI)
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Figure 68. RF/LO Input Return Loss
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Figure 70. OIP2 vs Frequency over LO Drive (H/LSI)
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Figure 72. 3 x 3 Spurious over Temperature (H/LSI)