SLLS814A July   2007  – June 2015 TRS3221

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics—Power
    6. 6.6  Electrical Characteristics—Driver
    7. 6.7  Electrical Characteristics—Receiver
    8. 6.8  Electrical Characteristics—Status
    9. 6.9  Switching Characteristics—Driver
    10. 6.10 Switching Characteristics—Receiver
    11. 6.11 Switching Characteristics—Status
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power
      2. 8.3.2 RS232 Driver
      3. 8.3.3 RS232 Receiver
      4. 8.3.4 RS232 Status
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC to GND –0.3 6 V
V+ to GND –0.3 7 V
V– to GND 0.3 –7 V
V+ + |V–|(2) 13 V
VI Input voltage DIN, EN, FORCEOFF, and FORCEON to GND –0.3 6 V
RIN to GND ±25
VO Output voltage DOUT to GND ±13.2 V
ROUT to GND –0.3 VCC + 0.3
TJ Junction temperature(3) 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) V+ and V– can have maximum magnitudes of 7 V, but their absolute difference cannot exceed 13 V.
(3) Maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA) / RθJA. Operating at the absolute maximum TJ of 150°C can affect reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except Pin 8 and Pin 13 ±3000 V
Pin 8, Pin 13
(RS232 ports)		 ±15000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) All pins ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

(see Figure 9)(1)
MIN NOM MAX UNIT
Supply voltage VCC = 3.3 V 3 3.3 3.6 V
VCC = 5 V 4.5 5 5.5
VIH Driver high-level input voltage DIN, FORCEOFF,
FORCEON, EN		 VCC = 3.3 V 2 V
VCC = 5 V 2.4
VIL Driver low-level input voltage DIN, FORCEOFF,
FORCEON, EN		 0.8 V
VI Driver input voltage DIN, FORCEOFF,
FORCEON, EN		 0 5.5 V
Receiver input voltage –25 25
TA Operating free-air temperature TRS3221C 0 70 °C
TRS3221I –40 85
(1) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.4 Thermal Information

THERMAL METRIC(1) TRS3221 UNIT
DB (SSOP) PW (TSSOP)
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 98.0 106.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 48.3 41.1 °C/W
RθJB Junction-to-board thermal resistance 48.7 51.4 °C/W
ψJT Junction-to-top characterization parameter 10.1 3.9 °C/W
ψJB Junction-to-board characterization parameter 48.1 50.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics—Power

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(2)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
II Input leakage current FORCEOFF, FORCEON, EN ±0.01 ±1 µA
ICC Supply current Automatic power down disabled No load,
VCC = 3.3 V to 5 V		 No load, FORCEOFF and
FORCEON at VCC		 0.3 1 mA
Powered off No load, FORCEOFF at GND 1 10 µA
Auto-powerdown enabled No load, FORCEOFF at VCC,
FORCEON at GND,
All RIN are open or grounded		 1 10
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.6 Electrical Characteristics—Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(3)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.4 V
VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC –5 –5.4
IIH High-level input current VI = VCC ±0.01 ±1 μA
IIL Low-level input current VI at GND ±0.01 ±1
IOS Short-circuit output current(2) VCC = 3.6 V VO = 0 V ±35 ±60 mA
VCC = 5.5 V VO = 0 V ±35 ±60
rO Output resistance VCC, V+, and V– = 0 V VO = ±2 V 300 10M Ω
Ioff Output leakage current FORCEOFF = GND VO = ±12 V,
VCC = 3 V to 3.6 V		 ±25 µA
VO = ±12 V,
VCC = 4.5 V to 5.5 V		 ±25
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one output should be shorted at a time.
(3) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5.

6.7 Electrical Characteristics—Receiver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(2)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VOH High-level output voltage IOH = –1 mA VCC – 0.6 VCC – 0.1 V
VOL Low-level output voltage IOL = 1.6 mA 0.4
VIT+ Positive-going input threshold voltage VCC = 3.3 V 1.5 2.4 V
VCC = 5 V 1.8 2.4
VIT– Negative-going input threshold voltage VCC = 3.3 V 0.6 1.1 V
VCC = 5 V 0.8 1.4
Vhys Input hysteresis (VIT+ – VIT–) 0.5
Ioff Output leakage current FORCEOFF = 0 V ±0.05 ±10 µA
ri Input resistance VI = ±3 V to ±25 V 3 5 7 kΩ
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.8 Electrical Characteristics—Status

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(2)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VT+(valid) Receiver input threshold for INVALID high-level output voltage FORCEON = GND,
FORCEOFF = VCC		 2.7 V
VT–(valid) Receiver input threshold for INVALID high-level output voltage FORCEON = GND,
FORCEOFF = VCC		 –2.7 V
VT(invalid) Receiver input threshold for INVALID low-level output voltage FORCEON = GND,
FORCEOFF = VCC		 –0.3 0.3 V
VOH INVALID high-level output voltage IOH = –1 mA,
FORCEON = GND,
FORCEOFF = VCC		 VCC – 0.6 V
VOL INVALID low-level output voltage IOH = –1 mA,
FORCEON = GND,
FORCEOFF = VCC		 0.4 V
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.9 Switching Characteristics—Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(3)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
Maximum data rate CL = 1000 pF, RL = 3 kΩ,
(see Figure 3)		 150 250 kbps
tsk(p) Pulse skew(2) CL = 150 to 2500 pF, RL = 3 kΩ to 7 kΩ,
(see Figure 4)		 100 ns
SR(tr) Slew rate, transition region
(see Figure 3)		 VCC = 3.3 V,
RL = 3 kΩ to 7 kΩ		 CL = 150 to 1000 pF 6 30 V/μs
CL = 150 to 2500 pF 4 30
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
(3) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.10 Switching Characteristics—Receiver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(3)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Propagation delay time, low- to high-level output CL = 150 pF,
(see Figure 5)		 150 ns
tPHL Propagation delay time, high- to low-level output CL = 150 pF,
(see Figure 5)		 150 ns
ten Output enable time CL = 150 pF, RL = 3 kΩ,
(see Figure 6)		 200 ns
tdis Output disable time CL = 150 pF, RL = 3 kΩ,
(see Figure 6)		 200 ns
tsk(p) Pulse skew(2) See Figure 5 50 ns
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
(3) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.11 Switching Characteristics—Status

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(2)
PARAMETER MIN TYP(1) MAX UNIT
tvalid Propagation delay time, low- to high-level output 1 µs
tinvalid Propagation delay time, high- to low-level output 30 µs
ten Supply enable time 100 µs
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.

6.12 Typical Characteristics

VCC = 3.3 V
TRS3221 C001_VOH.pngFigure 1. DOUT VOH vs Load Current
TRS3221 C001_VOL.pngFigure 2. DOUT VOL vs Load Current