SCDS203B DECEMBER   2005  – March 2019 TS5A63157

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Minimum and Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Overshoot and Undershoot Protection Circuitry
      2. 8.3.2 Isolation in Powered-Off Mode, V+ = 0 V
      3. 8.3.3 Break-before-make
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.4 Thermal Information

THERMAL METRIC(1) TS5A63157 UNIT
DBV DCK
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 209.9 298.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 147.1 103.9 °C/W
RθJB Junction-to-board thermal resistance 82.8 107.0 °C/W
ψJT Junction-to-top characterization parameter 65.3 2.7 °C/W
ψJB Junction-to-board characterization parameter 82.5 106.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application report.