JAJSOQ3A June   2022  – October 2022 TSM36A

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Protection Specifications
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Configuration Options
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.6 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS Device MIN TYP MAX UNIT
VRWM Reverse stand-off voltage TSM36A 0 36 V
VBRF Forward breakdown voltage(1) IIO = –10 mA TSM36A 0.8 V
VBRR Reverse breakdown voltage(1) IIO = 10 mA TSM36A 37.8 44.2 V
VCLAMP Clamping voltage(2) IPP = 25A, tp = 8/20 µs, from IO to GND TSM36A 50 V
IPP = 40 A, tp = 8/20 µs, from IO to GND TSM36A 57
ILEAK Leakage current VIO = +36 V TSM36A 1 μA
RDYN Dynamic resistance tp = 8/20 µs, from IO to GND TSM36A 0.5 Ω
CIO-GND Line capacitance VIO = 0 V, f = 1 MHz, Vp-p = 30 mV TSM36A 50 80 pF
(1) VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction. 
(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.