JAJSND0 September 2024 TUSB1021-Q1
PRODUCTION DATA
It may be necessary to incorporate an ESD component to protect the TUSB1021-Q1 from electrostatic discharge (ESD). TI recommends following the ESD protection recommendations listed in Table 8-2. A clamp voltage greater than value specified in Table 8-2 may require a RESD on each differential pin. Place the ESD component near the USB connector.
PARAMETER | RECOMMENDATION |
---|---|
Breakdown voltage | ≥ 3.5V |
I/O line capacitance | Data rates ≤ 5Gbps: ≤ 0.50pF |
Data rates > 5Gbps: ≤ 0.35pF | |
Delta capacitance between any P and N I/O pins | ≤ 0.07pF |
Clamping voltage at 8A IPP IO to GND (1) | ≤ 4.5V |
Typical dynamic resistance | ≤ 30mΩ |
MANUFACTURER | PART NUMBER | RESD TO SUPPORT IEC 61000-4-2 CONTACT ±8kV |
---|---|---|
Nexperia | PUSB3FR4 | 1Ω |
Nexperia | PESD2V8Y1BSF | 1Ω |
Texas Instruments | TPD1E04U04DPLR | 2Ω |
Texas Instruments | TPD4E02B04DQAR | 2Ω |