SLLS413L February   2000  – June 2017 TUSB2046B , TUSB2046I

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      USB-Tiered Configuration Example
  4. 4 Revision History
  5. 5 Description (Continued)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Differential Driver Switching Characteristics (Full Speed Mode)
    7. 7.7 Differential Driver Switching Characteristics (Low Speed Mode)
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 USB Power Management
      2. 8.3.2 Clock Generation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Vendor ID and Product ID With External Serial EEPROM
    5. 8.5 Programming
      1. Table 1. EEPROM Memory Map
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 TUSB2046x Power Supply
    2. 10.2 Downstream Port Power
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Placement
      2. 11.1.2 Differential Pairs
      3. 11.1.3 Ground
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

12.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.