SLLS414F March 2000 – August 2015 TUSB2077A
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage(2) | –0.5 | 3.6 | V | |
VI | Input voltage | –0.5 | VCC + 0.5 | V | |
VO | Output voltage | –0.5 | VCC + 0.5 | V | |
IIK | Input clamp current | VI < 0 V or VI < VCC | ±20 | mA | |
IOK | Output clamp current | VO < 0 V or VO < VCC | ±20 | mA | |
TA | Operating free-air temperature | 0 | 70 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VCC | Supply voltage | 3 | 3.3 | 3.6 | V | |
VI | Input voltage, TTL/LVCMOS(1) | 0 | VCC | V | ||
VO | Output voltage, TTL/LVCMOS(2) | 0 | VCC | V | ||
VIH(REC) | High-level input voltage, signal-ended receiver | 2 | VCC | V | ||
VIL(REC) | Low-level input voltage, signal-ended receiver | 0.8 | V | |||
VIH(TTL) | High-level input voltage, TTL/LVCMOS(1) | 2 | VCC | V | ||
VIL(TTL) | Low-level input voltage, TTL/LVCMOS(1) | 0 | 0.8 | V | ||
TA | Operating free-air temperature | 0 | 70 | °C | ||
R(DRV) | External series, differential driver resistor | 22 | Ω | |||
f(OPRH) | Operating (dc differential driver) high speed mode | 12 | Mb/s | |||
f(OPRL) | Operating (dc differential driver) low speed mode | 1.5 | Mb/s | |||
VICR | Common mode, input range, differential receiver | 0.8 | 2.5 | V | ||
tt | Input transition times, TTL/LVCMOS(1) | 0 | 25 | ns | ||
TJ | Junction temperature(3) | 0 | 115 | °C |
THERMAL METRIC(1) | TUSB2077A | UNIT | |
---|---|---|---|
PT (LQFP) | |||
48 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 66.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 21.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 37.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 31.4 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | °C/W |
PARAMETER | TEST CONDITION | MIN | MAX | UNIT | ||
---|---|---|---|---|---|---|
VOH | High-level output voltage | TTL/LVCMOS | IOH = –4 mA | VCC – 0.5 | V | |
USB data lines | R(DRV) = 15 kΩ to GND | 2.8 | ||||
IOH = –12 mA (without R(DRV)) | VCC – 0.5 | |||||
VOL | Low-level output voltage | TTL/LVCMOS | IOL = 4 mA | 0.5 | V | |
USB data lines | R(DRV) = 1.5 kΩ to 3.6 V | 0.3 | ||||
IOL = 12 mA (without R(DRV)) | 0.5 | |||||
VIT+ | Positive input threshold | TTL/LVCMOS | 1.8 | V | ||
Single-ended | 0.8 V ≤ VICR ≤ 2.5 V | 1.8 | ||||
VIT– | Negative-input threshold | TTL/LVCMOS | 0.8 | V | ||
Single-ended | 0.8 V ≤ VICR ≤ 2.5 V | 1 | ||||
Vhys | Input hysteresis(1)
(VT+ – VT–) |
TTL/LVCMOS | 0.3 | 0.7 | mV | |
Single-ended | 0.8 V ≤ VICR ≤ 2.5 V | 300 | 500 | |||
IOZ | High-impedance output current | TTL/LVCMOS | V = VCC or GND(2) | ±10 | μA | |
USB data lines | 0 V ≤ VO ≤ VCC | ±10 | ||||
IIL | Low-level input current | TTL/LVCMOS | VI = GND | –1 | μA | |
IIH | High-level input current | TTL/LVCMOS | VI = VCC | 1 | μA | |
z0(DRV) | Driver output impedance | USB data lines | Static VOH or VOL | 7.1 | 19.9 | Ω |
VID | Differential input voltage | USB data lines | 0.8 V ≤ VICR ≤ 2.5 V | 0.2 | V | |
ICC | Input supply current | Normal operation | 40 | mA | ||
Suspend mode | 1 | μA |
PARAMETER | TEST CONDITIONS | MIN | MAX | UNIT | |
---|---|---|---|---|---|
tr | Transition rise time for DP or DM | See Figure 1 and Figure 2 | 4 | 20 | ns |
tf | Transition fall time for DP or DM | See Figure 1 and Figure 2 | 4 | 20 | ns |
t(RFM) | Rise/fall time matching(1) | (tr/tf) × 100 | 90% | 110% | |
VO(CRS) | Signal crossover output voltage(1) | 1.3 | 2.0 | V |
PARAMETER | TEST CONDITIONS | MIN | MAX | UNIT | ||
---|---|---|---|---|---|---|
tr | Transition rise time for DP or DM(1) | CL = 200 pF to 600 pF, See Figure 1 and Figure 2 | 75 | 300 | ns | |
tf | Transition fall time for DP or DM(1) | CL = 200 pF to 600 pF, See Figure 1 and Figure 2 | 75 | 300 | ns | |
t(RFM) | Rise/fall time matching(1) | (tr/tf) × 100 | 80% | 120% | ||
VO(CRS) | Signal crossover output voltage(1) | CL = 200 pF to 600 pF | 1.3 | 2.0 | V |