JAJSEX2C december   2017  – august 2023 TVS2200

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings - JEDEC
    3. 7.3 ESD Ratings - IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Reliability Testing
    5. 8.5 Device Functional Modes
      1. 8.5.1 Protection Specifications
      2. 8.5.2 Minimal Derating
      3. 8.5.3 Transient Performance
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
      4. 9.2.4 Configuration Options
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 Trademarks
    5. 10.5 静電気放電に関する注意事項
    6. 10.6 用語集
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse Stand-off Voltage-0.522V
ILEAKLeakage CurrentMeasured at VIN = VRWM TA  = 27°C3.562nA
Measured at VIN = VRWM TA  = 85°C25400nA
Measured at VIN = VRWM TA  = 105°C801300nA
VFForward VoltageIIN  = 1 mA from GND to IO0.250.50.65V
VBRBreak-down VoltageIIN  = 1 mA from IO to GND24.625.927.6V
VFCLAMPForward Clamp Voltage40 A IEC 61000-4-5 Surge (8/20 µs) from GND to IO, 27°C125V
VCLAMPClamp Voltage24 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C27.227.7V
40 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C27.628V
35 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = VRWM before surge, TA = 125°C27.828.35V
RDYN8/20 µs surge dynamic resistanceCalculated from VCLAMP at .5*Ipp and Ipp surge current levels, 27°C30mΩ
CINInput pin capacitanceVIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND105pF
SRMaximum Slew Rate0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 27°C2.5V/µs
0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 105°C0.7V/µs