JAJSQN3
june 2023 – june 2023
UCC14140-Q1
PRODUCTION DATA
1
1
特長
2
アプリケーション
3
概要
4
Revision History
5
Device Comparison
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Insulation Specifications
7.6
Safety-Related Certifications
7.7
Electrical Characteristics
7.8
Safety Limiting Values
7.9
Insulation Characteristics
7.10
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Power Stage Operation
8.3.1.1
VDD-VEE Voltage Regulation
8.3.1.2
COM-VEE Voltage Regulation
8.3.1.3
Power Handling Capability
8.3.2
Output Voltage Soft Start
8.3.3
ENA and PG
8.3.4
Protection Functions
8.3.4.1
Input Undervoltage Lockout
8.3.4.2
Input Overvoltage Lockout
8.3.4.3
Output Undervoltage Protection
8.3.4.4
Output Overvoltage Protection
8.3.4.5
Overpower Protection
8.3.4.6
Overtemperature Protection
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.2.1
Capacitor Selection
9.2.2.2
Single RLIM Resistor Selection
9.2.2.3
RDR Circuit Component Selection
9.3
System Examples
9.4
Power Supply Recommendations
9.5
Layout
9.5.1
Layout Guidelines
9.5.2
Layout Example
10
Device and Documentation Support
10.1
Documentation Support
10.1.1
Related Documentation
10.2
ドキュメントの更新通知を受け取る方法
10.3
サポート・リソース
10.4
Trademarks
10.5
静電気放電に関する注意事項
10.6
用語集
11
Mechanical, Packaging, and Orderable Information
パッケージ・オプション
メカニカル・データ(パッケージ|ピン)
DWN|36
MPSS132
サーマルパッド・メカニカル・データ
発注情報
jajsqn3_oa
7.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002
(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011 Section 7.2
±500
V
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.