JAJSEW6B February   2018  – February 2024 UCC21222

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety-Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Thermal Derating Curves
    12. 5.12 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 Minimum Pulses
    2. 6.2 Propagation Delay and Pulse Width Distortion
    3. 6.3 Rising and Falling Time
    4. 6.4 Input and Disable Response Time
    5. 6.5 Programmable Dead Time
    6. 6.6 Power-Up UVLO Delay to OUTPUT
    7. 6.7 CMTI Testing
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Diode Structure in the UCC21222
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Pin
      2. 7.4.2 Programmable Dead Time (DT) Pin
        1. 7.4.2.1 DT Pin Tied to VCCI or DT Pin Left Open
        2. 7.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Designing INA/INB Input Filter
        3. 8.2.2.3 Select Dead Time Resistor and Capacitor
        4. 8.2.2.4 Select External Bootstrap Diode and its Series Resistor
        5. 8.2.2.5 Gate Driver Output Resistor
        6. 8.2.2.6 Estimating Gate Driver Power Loss
        7. 8.2.2.7 Estimating Junction Temperature
        8. 8.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 8.2.2.8.1 Selecting a VCCI Capacitor
          2. 8.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 8.2.2.8.3 Select a VDDB Capacitor
        9. 8.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Component Placement Considerations
      2. 10.1.2 Grounding Considerations
      3. 10.1.3 High-Voltage Considerations
      4. 10.1.4 Thermal Considerations
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Application Curves

Figure 8-5 and Figure 8-6 shows the bench test waveforms for the design example shown in Figure 8-1 under these conditions: VCC = 5.0 V, VDD = 12 V, fSW = 100 kHz, VDC-Link = 400 V.

Channel 1 (Blue): Gate-source signal on the high side power transistor.

Channel 2 (Cyan): Gate-source signal on the low side power transistor.

Channel 3 (Pink): INA pin signal.

Channel 4 (Green): INB pin signal.

In Figure 8-5, INA and INB are sent complimentary 3.3-V, 20%/80% duty-cycle signals. The gate drive signals on the power transistor have a 200-ns dead time with 400V high voltage on the DC-Link, shown in the measurement section of Figure 8-5. Note that with high voltage present, lower bandwidth differential probes are required, which limits the achievable accuracy of the measurement.

Figure 8-6 shows a zoomed-in version of the waveform of Figure 8-5, with measurements for propagation delay and dead time. Importantly, the output waveform is measured between the power transistors’ gate and source pins, and is not measured directly from the driver OUTA and OUTB pins.

GUID-4B1F8C7B-ED5F-4192-935A-9FF2AFF444B6-low.png
Figure 8-5 Bench Test Waveform for INA/B and OUTA/B
GUID-9489754F-9017-424D-B928-74FBC4372321-low.png
Figure 8-6 Zoomed-In bench-test waveform