JAJSEW6B February   2018  – February 2024 UCC21222

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety-Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Thermal Derating Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Minimum Pulses
    2. 6.2 Propagation Delay and Pulse Width Distortion
    3. 6.3 Rising and Falling Time
    4. 6.4 Input and Disable Response Time
    5. 6.5 Programmable Dead Time
    6. 6.6 Power-Up UVLO Delay to OUTPUT
    7. 6.7 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Diode Structure in the UCC21222
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Pin
      2. 7.4.2 Programmable Dead Time (DT) Pin
        1. 7.4.2.1 DT Pin Tied to VCCI or DT Pin Left Open
        2. 7.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Designing INA/INB Input Filter
        3. 8.2.2.3 Select Dead Time Resistor and Capacitor
        4. 8.2.2.4 Select External Bootstrap Diode and its Series Resistor
        5. 8.2.2.5 Gate Driver Output Resistor
        6. 8.2.2.6 Estimating Gate Driver Power Loss
        7. 8.2.2.7 Estimating Junction Temperature
        8. 8.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 8.2.2.8.1 Selecting a VCCI Capacitor
          2. 8.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 8.2.2.8.3 Select a VDDB Capacitor
        9. 8.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Component Placement Considerations
      2. 10.1.2 Grounding Considerations
      3. 10.1.3 High-Voltage Considerations
      4. 10.1.4 Thermal Considerations
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5.9 Electrical Characteristics

VVCCI = 3.3 V or 5.0 V, 0.1-µF capacitor from VCCI to GND and 1-µF capacitor from VDDA/B to VSSA/B, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, DT pin tied to VCCI, CL = 0 pF, TA = –40°C to +125°C unless otherwise noted(1)(2).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IVCCI VCCI quiescent current VINA = 0 V, VINB = 0 V 1.5 2.0 mA
IVDDA, IVDDB VDDA and VDDB quiescent current VINA = 0 V, VINB = 0 V 1.0 1.8 mA
IVCCI VCCI operating current (f = 500 kHz) current per channel 2.5 mA
IVDDA, IVDDB VDDA and VDDB operating current (f = 500 kHz) current per channel, COUT = 100 pF,
VVDDA, VVDDB = 12 V		 2.5 mA
VCC SUPPLY VOLTAGE UNDERVOLTAGE THRESHOLDS
VVCCI_ON UVLO Rising threshold 2.55 2.7 2.85 V
VVCCI_OFF UVLO Falling threshold 2.35 2.5 2.65 V
VVCCI_HYS UVLO Threshold hysteresis 0.2 V
VDD SUPPLY VOLTAGE UNDERVOLTAGE THRESHOLDS
VVDDA_ON, VVDDB_ON UVLO Rising threshold 8 8.5 9 V
VVDDA_OFF, VVDDB_OFF UVLO Falling threshold 7.5 8 8.5 V
VVDDA_HYS, VVDDB_HYS UVLO Threshold hysteresis 0.5 V
INA, INB AND DISABLE
VINAH, VINBH, VDISH Input high threshold voltage 1.6 1.8 2 V
VINAL, VINBL, VDISL Input low threshold voltage 0.8 1 1.25 V
VINA_HYS, VINB_HYS, VDIS_HYS Input threshold hysteresis 0.8 V
OUTPUT
IOA+, IOB+ Peak output source current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 4 A
IOA-, IOB- Peak output sink current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 6 A
ROHA, ROHB Output resistance at high state IOUT = –10 mA, ROHA, ROHB do not represent drive pull-up performance. See tRISE in Section 5.10 and Section 7.3.4 for details. 5 Ω
ROLA, ROLB Output resistance at low state IOUT = 10 mA 0.55 Ω
VOHA, VOHB Output voltage at high state VVDDA, VVDDB = 12 V, IOUT = –10 mA 11.95 V
VOLA, VOLB Output voltage at low state VVDDA, VVDDB = 12 V, IOUT = 10 mA 5.5 mV
VOAPDA, VOAPDB Driver output (VOUTA, VOUTB) active pull down VVDDA and VVDDB unpowered, IOUTA, IOUTB = 200 mA 1.75 2.1 V
DEAD TIME AND OVERLAP PROGRAMMING
Dead time, DT DT pin tied to VCCI Overlap determined by INA, INB —
RDT = 10 kΩ 80 100 120 ns
RDT = 20 kΩ 160 200 240
RDT = 50 kΩ 400 500 600
Dead time matching, |DTAB-DTBA| RDT = 10 kΩ — 0 10 ns
RDT = 20 kΩ — 0 20
RDT = 50 kΩ — 0 65
(1) Current direction in the testing conditions are defined to be positive into the pin and negative out of the specified terminal (unless otherwise noted).
(2) Parameters with only a typical value are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty.