SLUSA87C August   2010  – October 2015 UCC24610

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Normal Operation
      2. 7.3.2 Light-Load Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 UVLO Mode
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Run Mode
      4. 7.4.4 Light-Load Mode
      5. 7.4.5 Fault Mode and Other Protections
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VD and VS Detection
        2. 8.2.2.2 Enabling and TOFF Programming
        3. 8.2.2.3 TON Programming
        4. 8.2.2.4 GATE Drive and RGATE Considerations
        5. 8.2.2.5 VCC Range and Bypassing Considerations
        6. 8.2.2.6 SYNC Input Considerations
          1. 8.2.2.6.1 Determine the Minimum Change
          2. 8.2.2.6.2 After the ΔVDS_PRI Transition
          3. 8.2.2.6.3 The Value of CCM
          4. 8.2.2.6.4 Conservative Power-Loss Estimates
          5. 8.2.2.6.5 The Device Internal SYNC-to-GATE Delay Time
          6. 8.2.2.6.6 The CSYNC Capacitor Resets
        7. 8.2.2.7 Single-Fault Self-Protection Features
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Input voltage (6) VCC –0.3 6.5 V
EN/TOFF(2) –0.3 VCC V
TON(3) –0.3 VCC V
VD for IVD ≤ –10 mA –1.0 50 V
VS for IVS ≤ –10 mA –1.0 0.5 V
Input current, peak SYNC(4) pulsed, tPULSE ≤ 4 ms, duty cycle ≤ 1% ±100 mA
Output current, peak GATE(5) pulsed, tPULSE ≤ 4 ms, duty cycle ≤ 1% ±3 A
TJ Operating junction temperature –40 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) EN/TOFF can be driven by a voltage within the specified absolute maximum range or connected to a resistor to ground. Either method will program maximum off-time. When programmed by a resistor to GND, the voltage at the EN/TOFF terminal is internally limited to <VCC regardless of resistor value, so no absolute maximum input voltage considerations are required.
(3) In normal use, TON is connected to a resistor to GND. TON is normally not connected to a voltage source. When TON is connected to ground through a resistor, no absolute maximum input voltage considerations are required.
(4) In normal use, SYNC is connected with a capacitor to a high-speed voltage-transition source. The capacitor value shall be selected in conjunction with the worst-case voltage slew-rate to insure that the current into or out of SYNC is not in excess of the SYNC absolute maximum input current rating, or a current-limiting series resistor may also be necessary. In this use, if the input current is limited to less than the absolute maximum, no absolute maximum input voltage considerations are required. The capacitor breakdown voltage shall be selected to insure that dangerous voltage is not applied to the UCC24610. Continuous SYNC current is subject to the maximum operating junction temperature limitation.
(5) In normal use, GATE is connected to the gate of a power MOSFET through a small resistor. When used this way, GATE current is limited by the UCC24610 and no absolute maximum output current considerations are required. The series resistor shall be selected to minimize overshoot and ringing due to series inductance of the GATE output and power-MOSFET gate-drive loop. Continuous GATE current is subject to the maximum operating junction temperature limitation.
(6) Input voltages more negative than indicated may exist on any listed pin without excess stress or damage to the device if the pin’s input current magnitude is limited to less than -10mA. See separate ratings for SYNC and GATE pins.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2,000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN VCC input voltage 4.5 5.5 V
CVCC VCC bypass capacitor 0.1 µF
TJ Junction temperature –40 125 °C
fS Switching frequency 20 600 kHz
RTON TON-to-GND resistor 10 261 kΩ
REN/TOFF EN/TOFF-to-GND resistor 93 280 kΩ
tMIN SYNC minimum pulse width at VTHSYNC – 0.1 V 20 ns

6.4 Thermal Information

THERMAL METRIC(1) UCC24610 UNIT
DRB (SON) D (SOIC)
9 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 48.3 115.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 53.7 59.5 °C/W
RθJB Junction-to-board thermal resistance 23.5 54.3 °C/W
ψJT Junction-to-top characterization parameter 1.2 13.1 °C/W
ψJB Junction-to-board characterization parameter 23.7 53.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 8.1 N/A °C/W
(1) For more information about traditional and new thermal metrics, see the the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At VCC = 5 VDC, CGATE = 0 pF, RTON = 200 kΩ, REN/TOFF = 100 kΩ, −40°C ≤ TJ = TA ≤ +125°C, all voltages are with respect to GND, and currents are positive into and negative out of the specified terminal, unless otherwise noted. Typical values are at TJ = +25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BIAS SUPPLY
ICCSTART VCC current, undervoltage VCC = 4.05 V 70 100 μA
ICCSTBY VCC current, disabled VCC = 5.5 V, REN/TOFF = 0 Ω 130 200 μA
ICCON VCC current, enabled VCC = 5.5 V, REN/TOFF = 100 kΩ 1.40 2.15 2.80 mA
VENON EN/TOFF turnon threshold, rising EN/TOFF driven, ICC > 1 mA 1.31 1.40 1.49 V
VENOFF EN/TOFF turnoff threshold, falling EN/TOFF driven, ICC < 200 µA 0.74 0.80 0.86 V
IEN-START EN/TOFF input current, disabled EN/TOFF = 1.3 V, rising from zero –21.5 –20.0 –18.5 μA
IEN-ON EN/TOFF input current, enabled EN/TOFF = 2 V –10.7 –10.0 –9.3 μA
UNDERVOLTAGE LOCKOUT (UVLO)
VCCON VCC turnon threshold Turnon detected by VEN > 1.0 V 4.15 4.40 4.65 V
VCCOFF VCC turnoff threshold Turnoff detected by VEN < 0.5 V 3.96 4.20 4.44 V
VCCHYST UVLO hysteresis VCCHYST = VCCON – VCCOFF 0.15 0.20 0.25 V
MOSFET VOLTAGE SENSING
VTHARM GATE rearming threshold VD to GND, rising 1.3 1.5 1.7 V
VTHON GATE turnon threshold (VD – VS) falling, VS = 0 V –220 –150 –80 mV
VTHOFF GATE turnoff threshold (VD – VS) rising, VS = 0 V –8 –5 –2 mV
IDH VD input bias current, high VD = 50 V, VS = 0 V 0.05 2.00 μA
IDL VD input bias current, low VD = -0.15 V, VS = 0 V –250 –150 –50 μA
IS VS input bias current VD = 0 V, VS = 0 V –250 –150 –50 μA
GATE DRIVER
rGUP GATE pullup resistance, enabled IGATE = –100 mA 2.0 3.6 Ω
rGDN GATE pulldown resistance, enabled IGATE = 100 mA 1.6 2.5 Ω
VOHG GATE output high voltage IGATE = –100 mA 4.64 4.80 V
VOLG GATE output low voltage IGATE = 100 mA 0.16 0.25 V
VOLGUV GATE output low voltage, UV IGATE = 25 mA, VCC = 0 V 0.70 0.90 V
VOLGOFF GATE output low voltage, disabled IGATE = 25 mA, VEN = 0 V 0.04 0.10 V
SYNCHRONIZATION
VTHSYNC SYNC falling threshold GATE output transitions from high to low VCC – 2.4 VCC – 2.0 VCC – 1.6 V
rSYNC SYNC pullup resistance Internal resistance from SYNC to VCC 1.6 2.0 2.4 kΩ

6.6 Timing Requirements

At VCC = 5 VDC, CGATE = 0 pF, RTON = 200 kΩ, REN/TOFF = 100 kΩ, −40°C ≤ TJ = TA ≤ +125°C, all voltages are with respect to GND, and currents are positive into and negative out of the specified terminal, unless otherwise noted. Typical values are at TJ = +25°C.
MIN NOM MAX UNIT
MOSFET VOLTAGE SENSING
tDON GATE turnon propagation delay, from VTHON to GATE > 1 V 44 70 ns
tDOFF GATE turnoff propagation delay, from VTHOFF to GATE < 4 V 16 35 ns
MINIMUM ON-TIME SETTING
tONLR Minimum on-time, low resistance, RTON = 16.5 kΩ 0.17 0.25 0.33 μs
tONHR Minimum on-time, high resistance, RTON = 200 kΩ 2.2 3.0 3.8 μs
MINIMUM OFF-TIME SETTING
tOFFLR Minimum off-time, low resistance, REN/TOFF = 100 kΩ 4.94 7.80 9.86 μs
tOFFHR Minimum off-time, high resistance, REN/TOFF = 261 kΩ 0.55 1.37 2.30 μs
tOFFLV Minimum off-time, low voltage, EN/TOFF = 1.0 V 4.94 7.80 9.86 μs
tOFFHV Minimum off-time, high voltage, EN/TOFF = 2.61 V 0.85 1.37 2.10 μs
tOFFOV Minimum off-time, over voltage, 3 V < VEN < VCC 0.48 0.65 0.82 μs
GATE DRIVER
tfGATE GATE rise time, from 1 V to 4 V, CGATE = 3300 pF 14 30 ns
trGATE GATE fall time, from 4 V to 1 V, CGATE = 3300 pF 9 25 ns
tDIS Disable delay, from EN falling to GATE falling 50 100 150 ns
SYNCHRONIZATION
tSDLY SYNC propagation delay, from SYNC falling to GATE falling 10% 20 60 ns

6.7 Typical Characteristics

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Figure 1. Bias Supply Current vs. Bias Supply Voltage
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Figure 3. Bias Supply Current vs. Temperature
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Figure 5. Enable Current vs. Temperature
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Figure 7. SYNC Threshold Voltage vs. Temperature
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Figure 9. VDS Gate-Off Threshold Voltages vs. Temperature
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Figure 11. Gate Propagation Delay Time vs. Temperature
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Figure 13. Minimum On Time vs. tON Resistance
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Figure 15. tON and tOFF Time vs. Temperature
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Figure 2. UVLO Threshold Voltage vs. Temperature
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Figure 4. Supply Current vs. Switching Frequency
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Figure 6. Enable Threshold Voltage vs. Temperature
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Figure 8. SYNC Propagation Delay Time vs. Temperature
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Figure 10. VDS Gate-On Threshold Voltage vs. Temperature
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Figure 12. Gate Rise And Fall Time vs. Temperature
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Figure 14. Minimum Off Time vs. tOFF Resistance
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Figure 16. VD Bias Current vs. Drain Sense Voltage