JAJSR32A june   2023  – august 2023 UCC27311A-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 概要 (続き)
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Timing Diagrams
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stages
      2. 8.3.2 Enable
      3. 8.3.3 Undervoltage Lockout (UVLO)
      4. 8.3.4 Level Shifter
      5. 8.3.5 Boot Diode
      6. 8.3.6 Output Stages
      7. 8.3.7 Negative Voltage Transients
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Threshold Type
        2. 9.2.2.2 VDD Bias Supply Voltage
        3. 9.2.2.3 Peak Source and Sink Currents
        4. 9.2.2.4 Propagation Delay
        5. 9.2.2.5 Power Dissipation
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 サード・パーティ製品に関する免責事項
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 サポート・リソース
    5. 12.5 Trademarks
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 用語集
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
      1.      55
    2. 13.2 Tape and Reel Information
    3. 13.3 Mechanical Data

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DRC|10
サーマルパッド・メカニカル・データ

11.1 Layout Guidelines

To improve the switching characteristics and efficiency of a design, the following layout rules must be followed.

  • Locate the driver as close as possible to the MOSFETs.
  • Locate the VDD – VSS and VHB-VHS (bootstrap) capacitors as close as possible to the device.
  • Pay close attention to the GND trace. Use the thermal pad of the DRM package as GND by connecting it to the VSS pin (GND). The GND trace from the driver goes directly to the source of the MOSFET, but must not be in the high current path of the MOSFET drain or source current.
  • Use similar rules for the HS node as for GND for the high-side driver.
  • For systems using multiple UCC27311A-Q1 devices, TI recommends that dedicated decoupling capacitors be located at VDD-VSS for each device.
  • Care must be taken to avoid placing VDD traces close to LO, HS, and HO signals.
  • Use wide traces for LO and HO closely following the associated GND or HS traces. A width of 60 to 100 mils is preferable where possible.
  • Use as least two or more vias if the driver outputs or SW node must be routed from one layer to another. For GND, the number of vias must be a consideration of the thermal pad requirements as well as parasitic inductance.
  • Avoid LI and HI (driver input) going close to the HS node or any other high dV/dT traces that can induce significant noise into the relatively high impedance leads.

A poor layout can cause a significant drop in efficiency or system malfunction, and it can even lead to decreased reliability of the whole system.