JAJSUW2 June   2024 UCC27524

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. 概要 (続き)
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Supply Current
      2. 7.3.2 Input Stage
      3. 7.3.3 Enable Function
      4. 7.3.4 Output Stage
      5. 7.3.5 Low Propagation Delays and Tightly Matched Outputs
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD and Undervoltage Lockout
        2. 8.2.2.2 Drive Current and Power Dissipation
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • D|8
  • P|8
  • DGN|8
  • DSD|8
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

Unless otherwise noted, VDD = 12 V, TA = TJ = –40°C to 150°C, 1-µF capacitor from VDD to GND, no load on the output. Typical condition specifications are at 25°C.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
BIAS CURRENTS (D, DGN)
IVDDqVDD quiescent supply currentVINx = 3.3 V, VDD = 3.4 V, ENx = VDD300450μA
IVDDVDD static supply currentVINx = 3.3 V, ENx = VDD0.61.0mA
IVDDVDD static supply currentVINx = 0 V, ENx = VDD0.71.0mA
IVDDOVDD operating currentfSW = 1000 kHz, ENx = VDD, VINx = 0 V – 3.3 V PWM3.23.8mA
IDISVDD disable currentVINx = 3.3 V, ENx = 0 V0.81.1mA
BIAS CURRENTS (DSD)
IDD(off) Start-up current VDD = 3.4 V,
INA = VDD,
INB = VDD
55 110 175 μA
VDD = 3.4 V,
INA = GND,
INB = GND
25 75 145
UNDERVOLTAGE LOCKOUT (UVLO) (D, DGN)
VVDD_ONVDD UVLO rising threshold3.84.14.4V
VVDD_OFFVDD UVLO falling threshold3.53.84.1V
VVDD_HYSVDD UVLO hysteresis0.3V
UNDERVOLTAGE LOCKOUT (UVLO) (DSD)
VON Supply start threshold TJ = 25°C 3.91 4.2 4.5 V
TJ = –40°C to 140°C 3.7 4.2 4.65
VOFF Minimum operating voltage after supply start 3.4 3.9 4.4
VDD_H Supply voltage hysteresis 0.2 0.3 0.5
INPUT (INA, INB) (D, DGN)
VINx_HInput signal high thresholdOutput High, ENx = HIGH1.822.3V
VINx_LInput signal low thresholdOutput Low, ENx = HIGH0.811.2V
VINx_HYSInput signal hysteresis1V
RINxINx pin pulldown resistorINx = 3.3 V120
INPUT (INA, INB) (DSD)
VIN_H Input signal high threshold Output high for non-inverting input pins
Output low for inverting input pins
1.9 2.1 2.3 V
VIN_L Input signal low threshold Output low for non-inverting input pins
Output high for inverting input pins
1 1.2 1.4
VIN_HYS Input hysteresis 0.7 0.9 1.1
ENABLE (ENA, ENB) (D, DGN)
VENx_HEnable signal high thresholdOutput High, INx = HIGH1.822.3V
VENx_LEnable signal low thresholdOutput Low, INx = HIGH0.811.2V
VENx_HYSEnable signal hysteresis1V
RENxEN pin pullup resistanceENx = 0 V200
ENABLE (ENA, ENB) (DSD)
VEN_H Enable signal high threshold Output enabled 1.9 2.1 2.3 V
VEN_L Enable signal low threshold Output disabled 0.95 1.15 1.35
VEN_HYS Enable hysteresis 0.7 0.95 1.1
OUTPUTS (OUTA, OUTB) (D, DGN)
ISRC(1)Peak output source currentVDD = 12 V, CVDD = 10 µF, CL = 0.1 µF, f = 1 kHz5A
ISNK(1)Peak output sink currentVDD = 12 V, CVDD = 10 µF, CL = 0.1 µF, f = 1 kHz–5A
ROH(2)Pullup resistanceIOUT = –50 mA, See Section 7.3.4.58.5
ROLPulldown resistanceIOUT = 50 mA0.61.1
OUTPUTS (OUTA, OUTB) (DSD)
ISNK/SRC(1) Sink/source peak current CLOAD = 0.22 µF, FSW = 1 kHz ±5 A
VDD-VOH High output voltage IOUT = –10 mA 0.075 V
VOL Low output voltage IOUT = 10 mA 0.01
ROH(2) Output pullup resistance IOUT = –10 mA 2.5 5 7.5
ROL Output pulldown resistance IOUT = 10 mA 0.15 0.5 1
Parameter not tested in production.
Output pullup resistance in this table is a DC measurement that measures resistance of PMOS structure only (not N-channel structure).