JAJSUW2 June   2024 UCC27524

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 概要 (続き)
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Supply Current
      2. 7.3.2 Input Stage
      3. 7.3.3 Enable Function
      4. 7.3.4 Output Stage
      5. 7.3.5 Low Propagation Delays and Tightly Matched Outputs
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD and Undervoltage Lockout
        2. 8.2.2.2 Drive Current and Power Dissipation
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • D|8
  • P|8
  • DGN|8
  • DSD|8
サーマルパッド・メカニカル・データ
発注情報

8.2.2.1 VDD and Undervoltage Lockout

The UCC27524 device has an internal undervoltage-lockout (UVLO) protection feature on the VDD pin supply circuit blocks. When VDD is rising and the level is still below UVLO threshold, this circuit holds the output low, regardless of the status of the inputs. The UVLO is typically 4V with 300-mV typical hysteresis. This hysteresis prevents chatter when low VDD supply voltages have noise from the power supply and also when there are droops in the VDD bias voltage when the system commences switching and there is a sudden increase in IDD. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging GaN power semiconductor devices.

For example, at power up, the UCC27524 driver-device output remains low until the VDD voltage reaches the UVLO threshold if enable pin is active or floating. The magnitude of the OUT signal rises with VDD until steady-state VDD is reached. The operation in Figure 8-2 shows that the output remains low until the UVLO threshold is reached, and then the output is in-phase with the input.

Because the device draws current from the VDD pin to bias all internal circuits, for the best high-speed circuit performance, two VDD bypass capacitors are recommended to prevent noise problems. The use of surface mount components is highly recommended. A 0.1-μF ceramic capacitor must be located as close as possible to the VDD to GND pins of the gate-driver device. In addition, a larger capacitor (such as 1-μF) with relatively low ESR must be connected in parallel and close proximity, in order to help deliver the high-current peaks required by the load. The parallel combination of capacitors presents a low impedance characteristic for the expected current levels and switching frequencies in the application.

UCC27524 Power-Up Non-Inverting DriverFigure 8-2 Power-Up Non-Inverting Driver