JAJSUW2 June   2024 UCC27524

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 概要 (続き)
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Supply Current
      2. 7.3.2 Input Stage
      3. 7.3.3 Enable Function
      4. 7.3.4 Output Stage
      5. 7.3.5 Low Propagation Delays and Tightly Matched Outputs
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD and Undervoltage Lockout
        2. 8.2.2.2 Drive Current and Power Dissipation
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • D|8
  • P|8
  • DGN|8
  • DSD|8
サーマルパッド・メカニカル・データ
発注情報

8.1 Application Information

High-current gate-driver devices are required in switching power applications for a variety of reasons. In order to effect the fast switching of power devices and reduce associated switching-power losses, a powerful gate-driver device employs between the PWM output of control devices and the gates of the power semiconductor devices. Further, gate-driver devices are indispensable when it is not feasible for the PWM controller device to directly drive the gates of the switching devices. With the advent of digital power, this situation is often encountered because the PWM signal from the digital controller is often a 3.3-V logic signal which is not capable of effectively turning on a power switch. A level-shifting circuitry is required to boost the 3.3-V signal to the gate-drive voltage (such as 12 V) in order to fully turn on the power device and minimize conduction losses. Traditional buffer-drive circuits based on NPN/PNP bipolar transistors in a totem-pole arrangement, as emitter-follower configurations, prove inadequate with digital power because the traditional buffer-drive circuits lack level-shifting capability. Gate-driver devices effectively combine both the level-shifting and buffer-drive functions. Gate-driver devices also find other needs such as minimizing the effect of high-frequency switching noise by locating the high-current driver physically close to the power switch, driving gate-drive transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in controller devices by moving gate-charge power losses into the controller. Finally, emerging wide band-gap power-device technologies such as GaN based switches, which are capable of supporting very high switching frequency operation, are driving special requirements in terms of gate-drive capability. These requirements include operation at low VDD voltages (5 V or lower), low propagation delays, tight delay matching and availability in compact, low-inductance packages with good thermal capability. In summary, gate-driver devices are an extremely important component in switching power combining benefits of high-performance, low-cost, component-count, board-space reduction, and simplified system design.