SLUSBL5A February   2015  – June 2019 UCC28730

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Zero-Power Input Consumption at No-Load
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Detailed Pin Description
        1. 7.3.1.1 VDD (Device Bias Voltage Supply)
        2. 7.3.1.2 GND (Ground)
        3. 7.3.1.3 HV (High Voltage Startup)
        4. 7.3.1.4 DRV (Gate Drive)
        5. 7.3.1.5 CBC (Cable Compensation)
        6. 7.3.1.6 VS (Voltage Sense)
        7. 7.3.1.7 CS (Current Sense)
      2. 7.3.2 Primary-Side Regulation (PSR)
      3. 7.3.3 Primary-Side Constant Voltage Regulation
      4. 7.3.4 Primary-Side Constant Current Regulation
      5. 7.3.5 Wake-Up Detection and Function
      6. 7.3.6 Valley-Switching and Valley-Skipping
      7. 7.3.7 Startup Operation
      8. 7.3.8 Fault Protection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stand-By Power Estimate
        2. 8.2.2.2 Input Bulk Capacitance and Minimum Bulk Voltage
        3. 8.2.2.3 Transformer Turns Ratio, Inductance, Primary-Peak Current
        4. 8.2.2.4 Transformer Parameter Verification
        5. 8.2.2.5 Output Capacitance
        6. 8.2.2.6 VDD Capacitance, CVDD
        7. 8.2.2.7 VS Resistor Divider, Line Compensation, and Cable Compensation
        8. 8.2.2.8 VS Wake-Up Detection
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don'ts
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
      2. 11.1.2 Device Nomenclature
        1. 11.1.2.1  Capacitance Terms in Farads
        2. 11.1.2.2  Duty-Cycle Terms
        3. 11.1.2.3  Frequency Terms in Hertz
        4. 11.1.2.4  Current Terms in Amperes
        5. 11.1.2.5  Current and Voltage Scaling Terms
        6. 11.1.2.6  Transformer Terms
        7. 11.1.2.7  Power Terms in Watts
        8. 11.1.2.8  Resistance Terms in Ω
        9. 11.1.2.9  Timing Terms in Seconds
        10. 11.1.2.10 DC Voltage Terms in Volts
        11. 11.1.2.11 AC Voltage Terms in Volts
        12. 11.1.2.12 Efficiency Terms
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

8.2.2.4 Transformer Parameter Verification

The transformer turns ratio selected affects the MOSFET VDS and secondary rectifier reverse voltage VREV, these should be reviewed.

The secondary rectifier reverse voltage stress is determined by the equation below. A snubber around the rectifier may be necessary to suppress any voltage spike, due to secondary leakage inductance, which adds to VREV.

Equation 16. UCC28730 qu16_lusbl5.gif

For the MOSFET VDS peak stress, an estimated leakage inductance voltage spike, VLK, should to be included.

Equation 17. UCC28730 qu17_lusbl5.gif

In the high-line, minimum-load condition, the UCC28730 requires a minimum on-time of the MOSFET (tON(min)) and minimum demagnetization time of the secondary rectifier (tDMAG(min)). The selection of fMAX, LP and RCS affects the actual minimum tON and tDMAG achieved. The following equations are used to determine if the minimum tON is greater than tCSLEB and minimum tDMAG target of >1.2 µs is achieved.

Equation 18. UCC28730 qu18_lusbl5.gif
Equation 19. UCC28730 qu19_lusbl5.gif