SLES275A January 2015 – December 2017 VSP5324-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | AVDD | –0.3 | 2.2 | V |
LVDD | –0.3 | 2.2 | V | |
Ground voltage differences | Between AGND and LGND | –0.3 | 0.3 | V |
Input voltage | Digital outputs | –0.3 | lesser of 2.2 or (LVDD + 0.3) | V |
Digital inputs (CLKN, CLKP(2), RESET, SCLK, SDATA, CS, SYNC, PD, INT/EXT) | –0.3 | lesser of 2.2 or (LVDD + 0.3) | V | |
Analog inputs | –0.3 | lesser of 2.2 or (LVDD + 0.3) | V | |
Input current (all pins except supplies) | –10 | 10 | mA | |
Ambient temperature, under bias, TA | –40 | 105 | °C | |
Junction temperature, TJ | 125 | °C | ||
Storage temperature, Tstg | –55 | 125 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) | ±2000 | V | |
Charged device model (CDM), per AEC Q100-011 | Other pins | ±500 | |||
Corner pins (1, 16, 17, 32, 33, 48, 49, and 64) | ±750 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
V(AVDD) | Analog supply voltage | 1.7 | 1.8 | 1.9 | V | |
V(LVDD) | Digital supply voltage | 1.7 | 1.8 | 1.9 | V | |
VID | Differential input voltage | 2 | VPP | |||
VIC | Input common-mode voltage | VIC ± 50 | mV | |||
Input clock sample rate | Two-lane LVDS interface | 10 | 80 | MSPS | ||
One-lane LVDS interface | 10 | 50 | MSPS | |||
(VCLKP – VCLKM) | Input clock amplitude differential | Sine wave, ac-coupled | 1.5 | VPP | ||
LVPECL, ac-coupled | 1.6 | VPP | ||||
LVDS, ac-coupled | 0.7 | VPP | ||||
LVCMOS, single-ended, ac-coupled | 3.3 | V | ||||
Duty cycle | 35% | 50% | 65% | |||
CLOAD | Maximum external capacitance from each output pin to DRGND | 5 | pF | |||
RLOAD | Differential resistance between LVDS output pairs (LVDS mode) | 100 | Ω | |||
TA | Operating free-air | –40 | 105 | °C |
THERMAL METRIC(1) | VSP5324-Q1 | UNIT | |
---|---|---|---|
RGC (VQFN) | |||
64 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 20.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 6.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 2.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 2.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
Resolution | 12 | Bits | |||||
SNR | Signal-to-noise ratio | ƒIN = 5 MHz | 68 | 70 | dBFS | ||
ƒIN = 30 MHz | 69.5 | dBFS | |||||
SINAD | Signal-to-noise and distortion ratio | ƒIN = 5 MHz | 69.8 | dBFS | |||
ƒIN = 30 MHz | 69.2 | dBFS | |||||
SFDR | Spurious-free dynamic range | ƒIN = 5 MHz | 64 | 85 | dBc | ||
ƒIN = 30 MHz | 82 | dBc | |||||
THD | Total harmonic distortion | ƒIN = 5 MHz | 63 | 81.5 | dBc | ||
ƒIN = 30 MHz | 78 | dBc | |||||
HD2 | Second-harmonic distortion | ƒIN = 5 MHz | 64 | 90 | dBc | ||
ƒIN = 30 MHz | 86 | dBc | |||||
HD3 | Third-harmonic distortion | ƒIN = 5 MHz | 64 | 85 | dBc | ||
ƒIN = 30 MHz | 82 | dBc | |||||
Worst spur (other than second and third harmonics) |
ƒIN = 5 MHz | 91 | dBc | ||||
ƒIN = 30 MHz | 83 | dBc | |||||
IMD | Two-tone intermodulation distortion | ƒ1 = 8 MHz, ƒ2 = 10 MHz, each tone at –7 dBFS |
83 | dBc | |||
Crosstalk (far channel) | 10-MHz full-scale signal on aggressor channel; no input signal applied on victim channel | 95 | dB | ||||
Input overload recovery | Recovery to within 1% (of full-scale) for 6-dB overload with sine-wave input | 1 | Clock cycle | ||||
PSRR | AC power-supply rejection ratio | For 50-mVPP signal on AVDD supply, up to 10 MHz, no signal applied to analog inputs |
50 | dB | |||
ENOB | Effective number of bits | ƒIN = 5 MHz | 11.3 | Bits | |||
DNL | Differential nonlinearity | ƒIN = 5 MHz | –0.8 | ±0.2 | 0.8 | LSBs | |
INL | Integral nonlinearity | ƒIN = 5 MHz | ±0.3 | 1 | LSBs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
ANALOG INx_PUT | |||||||
VID | Differential input | Voltage range | 2 | VPP | |||
Resistance, at dc | 2 | kΩ | |||||
Capacitance, at dc | 2.2 | pF | |||||
Analog input bandwidth | 550 | MHz | |||||
Analog input common-mode current (per input pin) | 1.6 | µA/ MSPS |
|||||
VOC | Common-mode output voltage | 0.95 | V | ||||
IO(VCM) | VCM output current capability | 5 | mA | ||||
DC ACCURACY | |||||||
Offset error | ±5 | ±20 | mV | ||||
EGREF | Gain error resulting from internal reference inaccuracy alone | –2 | 2 | %FS | |||
EGCHAN | Gain error of channel alone | 0.5 | %FS | ||||
POWER SUPPLY | |||||||
IAVDD | Analog supply current | 80 MSPS | 114 | 135 | mA | ||
50 MSPS | 86 | mA | |||||
ILVDD | Output buffer supply current | Two-lane LVDS interface, 80 MSPS, 350-mV swing with 100-Ω external termination | 69 | 85 | mA | ||
One-lane LVDS interface, 50 MSPS, 350-mV swing with 100-Ω external termination | 56 | mA | |||||
Analog power | 80 MSPS | 205 | mW | ||||
50 MSPS | 155 | mW | |||||
Digital power LVDS interface | Two-lane LVDS interface, 80 MSPS, 350-mV swing with 100-Ω external termination | 124 | mW | ||||
One-lane LVDS interface, 50 MSPS, 350-mV swing with 100-Ω external termination | 101 | mW | |||||
Total power | 80 MSPS, two-lane LVDS interface | 329 | mW | ||||
50 MSPS, one-lane LVDS interface | 256 | mW | |||||
Global power-down | 40 | mW | |||||
Standby power | 135 | mW |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
DIGITAL INx_PUTS (RESET, SCLK, SDATA, CS, PDN, SYNC, INT/EXT) | |||||||
VIH | High-level input voltage | All digital inputs support 1.8-V and 3.3-V CMOS logic levels | > 1.3 | V | |||
VIL | Low-level input voltage | All digital inputs support 1.8-V and 3.3-V CMOS logic levels | < 0.4 | V | |||
IIH | High-level input current | VIH = 1.8 V | 6 | µA | |||
IIL | Low-level input current | VIL = 0 V | < 0.1 | µA | |||
DIGITAL OUTPUTS | |||||||
VOH | High-level output voltage | CMOS interface (SDOUT) | AVDD – 0.1 | V | |||
VOL | Low-level output voltage | CMOS interface (SDOUT) | 0.1 | V | |||
VOD(H) | High-level output differential voltage | LVDS interface (OUTP, OUTM, LCLKP, LCLKM, ADCLKP, ADCLKM), with an external 100-Ω termination | 245 | 420 | mV | ||
VOD(L) | Low-level output differential voltage | LVDS interface (OUTP, OUTM, LCLKP, LCLKM, ADCLKP, ADCLKM), with an external 100-Ω termination | –420 | –245 | mV | ||
VOC | Output common-mode voltage | 1.05 | V |
MIN | NOM | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|
Aperture delay | 4 | ns | |||||
Aperture delay matching(2)(3) | Between the two channels of the same device | ±175 | ps | ||||
Aperture delay variation | Between two devices at the same temperature and LVDD supply | 2.5 | ns | ||||
Aperture jitter (RMS) | 320 | fs | |||||
Wakeup time | Time to valid data after coming out of partial power-down mode |
5 | 50 | µs | |||
Time to valid data after coming out of global power-down mode |
100 | 500 | µs | ||||
ADC latency | One-lane LVDS output interface | 11 | Clock cycles | ||||
Two-lane LVDS output interface | 15 | Clock cycles | |||||
tsu | Data setup time | Data valid to zero crossing of LCLKP, 80 MSPS, two-lane LVDS |
0.61 | ns | |||
th | Data hold time(4) | Zero crossing of LCLKP to data becoming invalid, 80 MSPS, two-lane LVDS |
0.74 | ns | |||
tp | Clock propagation delay | Input clock rising edge crossover to frame clock rising edge crossover, two-lane LVDS for 10 ≤ ƒS ≤ 80 MSPS |
(11 / 12) × tS + td |
ns | |||
Input clock rising edge crossover to frame clock rising edge crossover, one-lane LVDS for 10 ≤ ƒS ≤ 65 MSPS |
(9 / 12) × tS + td |
ns | |||||
td | Delay time | 6.8 | 9 | 11.8 | ns | ||
LVDS bit clock duty cycle | Differential clock duty cycle (LCLKP – LCLKM) | 50 | % | ||||
tf | Data fall time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.2 | ns | |||
tr | Data rise time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.2 | ns | |||
tr(CLK) | Output clock rise time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.18 | ns | |||
tf(CLK) | Output clock fall time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.18 | ns |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
th | LCLKP zero-crossing to data becoming invalid (both edges) | ƒ(SAMPLE) = 40 MSPS | 0.75 | ns | |
ƒ(SAMPLE) = 50 MSPS | 0.47 | ||||
ƒ(SAMPLE) = 65 MSPS | 0.25 | ||||
tsu | Data valid to LCLKP zero-crossing (both edges) | ƒ(SAMPLE) = 40 MSPS | 0.62 | ns | |
ƒ(SAMPLE) = 50 MSPS | 0.38 | ||||
ƒ(SAMPLE) = 65 MSPS | 0.19 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
th | LCLKP zero-crossing to data becoming invalid (both edges) | ƒ(SAMPLE) = 40 MSPS | 1.9 | ns | |
ƒ(SAMPLE) = 50 MSPS | 1.55 | ||||
ƒ(SAMPLE) = 65 MSPS | 1.1 | ||||
tsu | Data valid to LCLKP zero-crossing (both edges) | ƒ(SAMPLE) = 40 MSPS | 1.44 | ns | |
ƒ(SAMPLE) = 50 MSPS | 1.02 | ||||
ƒ(SAMPLE) = 65 MSPS | 0.64 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
ƒ(SCLK) | SCLK frequency = 1 / tSCLK | > DC | MHz | |
tsu(LOADS) | SEN to SCLK setup time | 33 | ns | |
tsu(LOADH) | SCLK to SEN hold time | 33 | ns | |
tsu(D) | SDATA setup time | 33 | ns | |
th(D) | SDATA hold time | 33 | ns |
NOINDENT:
With an external 100-Ω termination..SNR = 69.6 dBFS | SINAD = 69.5 dBFS |
SFDR = 89.3 dBc | THD = 85.9 dBc |
Sample Rate = 80 MSPS |
SNR = 68.5 dBFS | SINAD = 67.8 dBFS |
SFDR = 76.5 dBc | THD = 75 dBc |
Sample Rate = 80 MSPS |
SNR = 69.6 dBFS | SINAD = 69.4 dBFS |
SFDR = 84.8 dBc | THD = 83.2 dBc |
Sample Rate = 80 MSPS |
SNR = 69.8 dBFS | SINAD = 69.7 dBFS |
SFDR = 85.1 dBc | THD = 84.7 dBc |
Sample Rate = 40 MSPS |
SNR = 69.6 dBFS | SINAD = 69.5 dBFS |
SFDR = 86.8 dBc | THD = 84 dBc |
Sample Rate = 40 MSPS |
ƒIN = 5 MHz | ||
ƒIN = 5 MHz |
ƒIN = 5 MHz | External reference using the VCM pin | |
ƒIN = 5 MHz |
ƒIN = 5 MHz | ||
A 0.7-VPP 5-MHz sine-wave input is applied on the INx_P pin | ||
The INx_M pin is connected to the device VCM pin |
SNR = 67.2 dBFS | SINAD = 66.6 dBFS |
SFDR = 76.5 dBc | THD = 74 dBc |
Sample Rate = 40 MSPS |
ƒIN = 5 MHz | ||
ƒIN = 5 MHz |
ƒIN = 5 MHz | ||
ƒIN = 5 MHz |
A 0.7-VPP 5-MHz sine-wave input is applied on the INx_P pin | ||
The INx_M pin is connected to the device VCM pin |
ƒIN = 3 MHz | 50-mVPP signal superimposed on the input common-mode | |
SNR = 70.8 dBFS | SINAD = 70.7 dBFS | SFDR = 88.7 dBc |
THD = 87.3 dBc | Decimate-by-2 filter enabled |
SNR = 70.8 dBFS | SINAD = 70.7 dBFS |
SFDR = 88.7 dBc | THD = 87.3 dBc |