SLPS684 July   2017 CSD18511KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Low Qg and Qgd
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 40-V, 2.1-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18511KTT FET_Pins.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10 V) 63.9 nC
Qgd Gate Charge Gate-to-Drain 9.7 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 3.2 mΩ
VGS = 10 V 2.1
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18511KTT 500 13-Inch Reel D2PAK
Plastic Package		 Tape and Reel
CSD18511KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 110 A
Continuous Drain Current (Silicon Limited), TC = 25°C 194
Continuous Drain Current (Silicon Limited), TC = 100°C 137
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation 188 W
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 56 A, L = 0.1 mH, RG = 25 Ω		 156 mJ
  1. Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD18511KTT D007_SLPS684.gif

Gate Charge

CSD18511KTT D004_SLPS684_FP.gif