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This 5.7 mΩ, 60 V SON 5 mm × 6 mm NexFET™ power MOSFET was designed to pair with the CSD18537NQ5A control FET and act as the sync FET for a complete industrial buck converter chipset solution.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10 V) | 15.0 | nC | |
Qgd | Gate Charge Gate-to-Drain | 2.9 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 8.6 | mΩ |
VGS = 10 V | 5.7 | mΩ | ||
VGS(th) | Threshold Voltage | 2.0 | V |
DEVICE | MEDIA | QTY | PACKAGE | SHIP |
---|---|---|---|---|
CSD18563Q5A | 13-Inch Reel | 2500 | SON 5 × 6 mm Plastic Package |
Tape and Reel |
CSD18563Q5AT | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 93 | ||
Continuous Drain Current(1) | 15 | ||
IDM | Pulsed Drain Current(2) | 251 | A |
PD | Power Dissipation(1) | 3.2 | W |
Power Dissipation, TC = 25°C | 116 | ||
TJ, Tstg |
Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 54 A, L = 0.1 mH, RG = 25 Ω |
146 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from B Revision (January 2015) to C Revision
Changes from A Revision (January 2014) to B Revision
Changes from * Revision (July 2013) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 60 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 48 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.7 | 2.0 | 2.4 | V | |
RDS(on) | Drain-to-source on resistance | VGS = 4.5 V, ID = 18 A | 8.6 | 10.8 | mΩ | ||
VGS = 10 V, ID = 18 A | 5.7 | 6.8 | mΩ | ||||
gfs | Transconductance | VDS = 30 V, ID = 18 A | 60 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 30 V, ƒ = 1 MHz | 1150 | 1500 | pF | ||
Coss | Output capacitance | 280 | 364 | pF | |||
Crss | Reverse transfer capacitance | 3.9 | 5.1 | pF | |||
RG | Series gate resistance | 1.5 | 3.0 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 30 V, ID = 18 A | 7.3 | 9.5 | nC | ||
Qg | Gate charge total (10 V) | 15 | 20 | ||||
Qgd | Gate charge gate-to-drain | 2.9 | nC | ||||
Qgs | Gate charge gate-to-source | 3.3 | nC | ||||
Qg(th) | Gate charge at Vth | 2.3 | nC | ||||
Qoss | Output charge | VDS = 30 V, VGS = 0 V | 36 | nC | |||
td(on) | Turn on delay time | VDS = 30 V, VGS = 10 V, IDS = 18 A, RG = 0 Ω | 3.2 | ns | |||
tr | Rise time | 6.3 | ns | ||||
td(off) | Turn off delay time | 11.4 | ns | ||||
tf | Fall time | 1.7 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 18 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse recovery charge | VDS= 30 V, IF = 18 A, di/dt = 300 A/μs | 63 | nC | |||
trr | Reverse recovery time | 49 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 1.3 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 50 |
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Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. |
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Max RθJA = 125°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu. |