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The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD22202W15 | 3000 | 7-Inch Reel | 1.5 mm × 1.5 mm Wafer BGA Package | Tape and Reel |
CSD22202W15T | 250 | 7-Inch Reel |
TA = 25°C unless otherwise stated | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –8 | V |
VGS | Gate-to-Source Voltage | –6 | V |
ID | Continuous Drain Current(1)
(Silicon Limitted) |
–10 | A |
Pulsed Drain Current(2) | –48 | ||
IG | Continuous Gate Current(3) | –0.5 | A |
PD | Power Dissipation(1) | 1.5 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (July 2014) to B Revision
Changes from * Revision (June 2013) to A Revision
THERMAL METRIC | TYPICAL VALUES | UNIT | |||
---|---|---|---|---|---|
RθJA | Junction-to-Ambient Thermal Resistance(1) | 75 | °C/W | ||
Junction-to-Ambient Thermal Resistance(2) | 210 |
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Typ RθJA = 75°C/W when mounted on 1inch2 of 2 oz. Cu. |
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Typ RθJA = 210°C/W when mounted on minimum pad area of 2 oz. Cu. |
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.