JAJS485F July   2009  – April 2017 TPA3110D2

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
  4. 改訂履歴
  5. Device Comparison Table
  6. Pin Configuration and F unctions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 DC Characteristics: 24 V
    6. 7.6 DC Characteristics: 12 V
    7. 7.7 AC Characteristics: 24 V
    8. 7.8 AC Characteristics: 12 V
    9. 7.9 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 TPA3110D2 Modulation Scheme
        1. 9.3.1.1 Ferrite Bead Filter Considerations
        2. 9.3.1.2 Efficiency: LC Filter Required With The Traditional Class-D Modulation Scheme
        3. 9.3.1.3 When to Use an Output Filter for EMI Suppression
      2. 9.3.2 Gain Setting Via GAIN0 And GAIN1 Inputs
      3. 9.3.3 Differential Inputs
      4. 9.3.4 PLIMIT
      5. 9.3.5 GVDD Supply
      6. 9.3.6 PBTL Select
      7. 9.3.7 Thermal Protection
      8. 9.3.8 DC Detect
      9. 9.3.9 Short-Circuit Protection and Automatic Recovery Feature
    4. 9.4 Device Functional Modes
      1. 9.4.1 SD Operation
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Stereo Class-D Amplifier With BTL Output and Single-Ended Inputs With Power Limiting
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Input Resistance
          2. 10.2.1.2.2 Input Capacitor, CI
          3. 10.2.1.2.3 BSN and BSP Capacitors
          4. 10.2.1.2.4 Using Low-ESR Capacitors
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Stereo Class-D Amplifier With PBTL Output and Single-Ended Input
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
  11. 11Power Supply Recommendations
    1. 11.1 Power Supply Decoupling, CS
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 開発サポート
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 コミュニティ・リソース
    4. 13.4 商標
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 Glossary
  14. 14メカニカル、パッケージ、および注文情報

Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

Application Information

This section describes a stereo BTL application and a mono PBTL application. In the stereo application the Power Limiter is implemented, however in the mono application this limiter is not used.

Typical Applications

Stereo Class-D Amplifier With BTL Output and Single-Ended Inputs With Power Limiting

TPA3110D2 btl_app_sch_los528.gif Figure 42. Typical Application Schematic With BTL Output and Single-Ended Inputs With Power Limiting

Design Requirements

For this design example, use the parameters listed in Table 5.

Table 5. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE
Power supply 8 V to 26 V
Shutdown, gain, and PBTL controls High > 2 V
Low < 0.8 V
Speaker impedance BTL 4 to 8 Ω
Speaker impedance PBTL 2 to 8 Ω

Detailed Design Procedure

Input Resistance

Changing the gain setting can vary the input resistance of the amplifier from its smallest value, 9 kΩ ±20%, to the largest value, 60 kΩ ±20%. As a result, if a single capacitor is used in the input high-pass filter, the –3 dB or cutoff frequency may change when changing gain steps.

TPA3110D2 ai_in_res_los469.gif Figure 43. Input Impedance of the TPA3110D2

The –3-dB frequency can be calculated using Equation 2. Use the ZI values given in Table 2.

Equation 2. TPA3110D2 q_freq_los469.gif

Input Capacitor, CI

In the typical application, an input capacitor (CI) is required to allow the amplifier to bias the input signal to the proper dc level for optimum operation. In this case, CI and the input impedance of the amplifier (ZI) form a high-pass filter with the corner frequency determined in Equation 3.

Equation 3. TPA3110D2 q_fc_los469.gif

The value of CI is important, as it directly affects the bass (low-frequency) performance of the circuit. Consider the example where ZI is 60 kΩ and the specification calls for a flat bass response down to 20 Hz. Equation 3 is reconfigured as Equation 4.

Equation 4. TPA3110D2 q_ci_los469.gif

In this example, CI is 0.13 µF; so, one would likely choose a value of 0.15 μF as this value is commonly used. If the gain is known and is constant, use ZI from Table 2 to calculate CI. A further consideration for this capacitor is the leakage path from the input source through the input network (CI) and the feedback network to the load. This leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications as the dc level there is held at 3 V, which is likely higher than the source dc level. Note that it is important to confirm the capacitor polarity in the application. Additionally, lead-free solder can create dc offset voltages and it is important to ensure that boards are cleaned properly.

BSN and BSP Capacitors

The full H-bridge output stages use only NMOS transistors. Therefore, they require bootstrap capacitors for the high side of each output to turn on correctly. A 0.22 μF ceramic capacitor, rated for at least 25 V, must be connected from each output to its corresponding bootstrap input. Specifically, one 0.22 μF capacitor must be connected from OUTPx to BSPx, and one 0.22 μF capacitor must be connected from OUTNx to BSNx. (See the application circuit diagram in Figure 42.)

The bootstrap capacitors connected between the BSxx pins and corresponding output function as a floating power supply for the high-side N-channel power MOSFET gate drive circuitry. During each high-side switching cycle, the bootstrap capacitors hold the gate-to-source voltage high enough to keep the high-side MOSFETs turned on.

Using Low-ESR Capacitors

Low-ESR capacitors are recommended throughout this application section. A real (as opposed to ideal) capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the real capacitor behaves like an ideal capacitor.

Application Curves

TPA3110D2 g016_los528.gif
Note: Dashed Lines represent thermally limited regions.
Figure 44. Output Power vs Supply Voltage (BTL)
TPA3110D2 g017_los528.gif
Note: Dashed Lines represent thermally limited regions.
Figure 45. Output Power vs Supply Voltage (BTL)

Stereo Class-D Amplifier With PBTL Output and Single-Ended Input

TPA3110D2 blt_flt_free_los528.gif
100 kΩ resistor is needed if the PVCC slew rate is more than 10 V/ms.
Figure 46. Typical Application Schematic With PBTL Output and Single-Ended Input

Design Requirements

Refer to Table 5 for the Stereo Class-D Amplifier With PBTL Output and Single-Ended Input Application Design Requirements.

Detailed Design Procedure

Refer to Detailed Design Procedure for the Stereo Class-D Amplifier With PBTL Output and Single-Ended Input Application Detailed Design Procedure.

Application Curve

TPA3110D2 g028_los528.gif
Note: Dashed Lines represent thermally limited regions.
Figure 47. Output Power vs Supply Voltage (PBTL)