JAJSAC1H November   2007  – October 2024 LM3481

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
    1.     Pin Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings: LM3481
    3. 5.3 Recommended Operating Ratings
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Overvoltage Protection
      2. 6.3.2 Bias Voltage
      3. 6.3.3 Slope Compensation Ramp
      4. 6.3.4 Frequency Adjust, Synchronization, and Shutdown
      5. 6.3.5 Undervoltage Lockout (UVLO) Pin
      6. 6.3.6 Short-Circuit Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Boost Converter
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1  Custom Design with WEBENCH Tools
          2. 7.2.1.2.2  Power Inductor Selection
          3. 7.2.1.2.3  Programming the Output Voltage and Output Current
          4. 7.2.1.2.4  Current Limit With Additional Slope Compensation
          5. 7.2.1.2.5  Power Diode Selection
          6. 7.2.1.2.6  Power MOSFET Selection
          7. 7.2.1.2.7  Input Capacitor Selection
          8. 7.2.1.2.8  Output Capacitor Selection
          9. 7.2.1.2.9  Driver Supply Capacitor Selection
          10. 7.2.1.2.10 Compensation
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Typical SEPIC Converter
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 Power MOSFET Selection
          2. 7.2.2.2.2 Power Diode Selection
          3. 7.2.2.2.3 Selection of Inductors L1 and L2
          4. 7.2.2.2.4 Sense Resistor Selection
          5. 7.2.2.2.5 SEPIC Capacitor Selection
          6. 7.2.2.2.6 Input Capacitor Selection
          7. 7.2.2.2.7 Output Capacitor Selection
        3. 7.2.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Custom Design with WEBENCH Tools
      2. 8.1.2 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

7.2.2 Typical SEPIC Converter

LM3481 Typical SEPIC Converter using LM3481Figure 7-7 Typical SEPIC Converter using LM3481

Because the LM3481 controls a low-side N-Channel MOSFET, it can also be used in SEPIC (Single Ended Primary Inductance Converter) applications. An example of SEPIC using the LM3481 is shown in Figure 7-7. As shown in Figure 7-7, the output voltage can be higher or lower than the input voltage. The SEPIC uses two inductors to step-up or step-down the input voltage. The inductors L1 and L2 can be two discrete inductors or two windings of a coupled transformer because equal voltages are applied across the inductor throughout the switching cycle. Using two discrete inductors allows use of catalog magnetics, as opposed to a custom transformer. The input ripple can be reduced along with size by using the coupled windings of transformer for L1 and L2.

Due to the presence of the inductor L1 at the input, the SEPIC inherits all the benefits of a boost converter. One main advantage of SEPIC over a boost converter is the inherent input to output isolation. The capacitor CS isolates the input from the output and provides protection against shorted or malfunctioning load. Hence, the SEPIC is useful for replacing boost circuits when true shutdown is required. This means that the output voltage falls to 0V when the switch is turned off. In a boost converter, the output can only fall to the input voltage minus a diode drop.

The duty cycle of a SEPIC is given by:

Equation 43. LM3481

In Equation 43, VQ is the on-state voltage of the MOSFET, Q1, and VDIODE is the forward voltage drop of the diode.