JAJSCH2A September 2016 – June 2017 ADS9120
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
AVDD to GND | –0.3 | 2.1 | V |
DVDD to GND | –0.3 | 2.1 | V |
REFP to REFM | –0.3 | 5.5 | V |
REFM to GND | –0.1 | 0.1 | V |
Analog (AINP, AINM) to GND | –0.3 | REFP + 0.3 | V |
Digital input (RST, CONVST, CS, SCLK, SDI) to GND | –0.3 | DVDD + 0.3 | V |
Digital output (RVS, SDO-0, SDO-1, SDO-2, SDO-3) to GND | –0.3 | DVDD + 0.3 | V |
Operating temperature, TA | –40 | 85 | °C |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
AVDD | Analog supply voltage | 1.8 | V | ||
DVDD | Digital supply voltage | 1.8 | V | ||
REFP | Positive reference | 5 | V |
THERMAL METRIC(1) | ADS9120 | UNITS | |
---|---|---|---|
RGE (VQFN) | |||
24 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 31.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 29.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 8.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 8.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.0 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ANALOG INPUT | ||||||
FSR | Full-scale input range (AINP – AINM)(1) |
–VREF | VREF | V | ||
VIN | Absolute input voltage (AINP and AINM to REFGND) |
–0.1 | VREF + 0.1 | V | ||
VCM | Common-mode voltage range (AINP + AINM) / 2 |
(VREF / 2) – 0.1 | VREF / 2 | (VREF / 2) + 0.1 | V | |
CIN | Input capacitance | In sample mode | 60 | pF | ||
In hold mode | 4 | |||||
IIL | Input leakage current | ±1 | µA | |||
VOLTAGE REFERENCE INPUT | ||||||
VREF | Reference input voltage range | 2.5 | 5 | V | ||
IREF | Reference input current | Average current, VREF = 5 V, 2-kHz, full-scale input, throughput = 2.5 MSPS |
1.3 | mA | ||
DC ACCURACY | ||||||
Resolution | 16 | Bits | ||||
NMC | No missing codes | 16 | Bits | |||
INL | Integral nonlinearity | TA = –40°C to +85°C | –0.6 | ±0.25(2) | 0.6 | LSB(3) |
TA = –40°C to +125°C | –0.7 | ±0.25(2) | 0.7 | |||
DNL | Differential nonlinearity | TA = –40°C to +85°C | –0.6 | ±0.25(2) | 0.6 | LSB |
TA = –40°C to +125°C | –0.7 | ±0.25 | 0.7 | |||
E(IO) | Input offset error | –1 | ±0.025(2) | 1 | mV | |
dVOS/dT | Input offset thermal drift | 1 | μV/°C | |||
GE | Gain error | –0.02 | ±0.01(2) | 0.02 | %FS | |
GE/dT | Gain error thermal drift | 0.25 | ppm/°C | |||
Transition noise | 0.35 | LSB | ||||
CMRR | Common-mode rejection ratio | At dc to 20 kHz | 80 | dB | ||
AC ACCURACY(4) | ||||||
SINAD | Signal-to-noise + distortion | fIN = 2 kHz | 94.4 | 96 | dB | |
fIN = 100 kHz | 95 | |||||
fIN = 500 kHz | 83.9 | |||||
SNR | Signal-to-noise ratio | fIN = 2 kHz | 94.5 | 96 | dB | |
fIN = 100 kHz | 95.9 | |||||
fIN = 500 kHz | 84 | |||||
THD | Total harmonic distortion(5) | fIN = 2 kHz | –118 | dB | ||
fIN = 100 kHz | –102 | |||||
fIN = 500 kHz | –101 | |||||
SFDR | Spurious-free dynamic range | fIN = 2 kHz | 120 | dB | ||
fIN = 100 kHz | 108 | |||||
fIN = 500 kHz | 106 | |||||
DIGITAL INPUTS(6) | ||||||
VIH | High-level input voltage | 0.65 DVDD | DVDD + 0.3 | V | ||
VIL | Low-level input voltage | –0.3 | 0.35 DVDD | V | ||
DIGITAL OUTPUTS(6) | ||||||
VOH | High-level output voltage | IOH = 2-mA source | DVDD – 0.45 | V | ||
VOL | Low-level output voltage | IOH = 2-mA sink | 0.45 | V | ||
POWER SUPPLY | ||||||
AVDD | Analog supply voltage | 1.65 | 1.8 | 1.95 | V | |
DVDD | Digital supply voltage | 1.65 | 1.8 | 1.95 | V | |
IDD | AVDD supply current (AVDD = 1.8 V) |
Active, 2.5-MSPS throughput, TA = –40°C to +85°C |
5 | 6.5 | mA | |
Active, 2.5-MSPS throughput, TA = –40°C to +125°C |
5 | 6.75 | ||||
Static, ACQ state | 3.7 | mA | ||||
Low-power, NAP mode | 500 | µA | ||||
Power-down, PD state | 1 | |||||
PD | AVDD power dissipation (AVDD = 1.8 V) |
Active, 2.5-MSPS throughput, TA = –40°C to +85°C |
9 | 11.7 | mW | |
Active, 2.5-MSPS throughput, TA = –40°C to +125°C |
9 | 12.15 | ||||
Static, ACQ state | 6.6 | mW | ||||
Low-power, NAP mode | 900 | µW | ||||
Power-down, PD state | 1.8 | |||||
TEMPERATURE RANGE | ||||||
TA | Operating free-air temperature | –40 | 125 | °C |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
TIMING REQUIREMENTS | |||||
fcycle | Sampling frequency | 2.5 | MHz | ||
tcycle | ADC cycle time period | 400 | ns | ||
twh_CONVST | Pulse duration: CONVST high | 30 | ns | ||
twl_CONVST | Pulse duration: CONVST low | 30 | ns | ||
tacq | Acquisition time | 100 | ns | ||
tqt_acq | Quiet acquisition time(1) | 25 | ns | ||
td_cnvcap | Quiet aperture time(1) | 10 | ns | ||
TIMING SPECIFICATIONS | |||||
tconv | Conversion time | 270 | 290 | ns |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
TIMING REQUIREMENTS | |||||
twl_RST | Pulse duration: RST low | 100 | ns | ||
TIMING SPECIFICATIONS | |||||
td_rst | Delay time: RST rising to RVS rising | 1250 | µs | ||
tnap_wkup | Wake-up time: NAP mode | 300 | ns | ||
tPWRUP | Power-up time: PD mode | 250 | µs |
MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|
TIMING REQUIREMENTS | ||||||
fCLK | Serial clock frequency | 75 | MHz | |||
tCLK | Serial clock time period | 13.33 | ns | |||
tph_CK | SCLK high time | 0.45 | 0.55 | tCLK | ||
tpl_CK | SCLK low time | 0.45 | 0.55 | tCLK | ||
tsu_CSCK | Setup time: CS falling to the first SCLK capture edge | 5 | ns | |||
tsu_CKDI | Setup time: SDI data valid to the SCLK capture edge | 1.2 | ns | |||
tht_CKDI | Hold time: SCLK capture edge to (previous) data valid on SDI | 0.65 | ns | |||
tht_CKCS | Delay time: last SCLK falling to CS rising | 5 | ns | |||
TIMING SPECIFICATIONS | ||||||
tden_CSDO | Delay time: CS falling to data enable | 4.5 | ns | |||
tdz_CSDO | Delay time: CS rising to SDO going to 3-state | 10 | ns | |||
td_CKDO | Delay time: SCLK launch edge to (next) data valid on SDO | 6.5 | ns | |||
td_CSRDY_f | Delay time: CS falling to RVS falling | 5 | ns | |||
td_CSRDY_r | Delay time: CS rising to RVS rising |
After NOP operation | 10 | ns | ||
After WR or RD operation | 70 |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
TIMING REQUIREMENTS | |||||
fCLK | Serial clock frequency | 100 | MHz | ||
tCLK | Serial clock time period | 10 | ns | ||
TIMING SPECIFICATIONS(1) | |||||
td_CKSTR_r | Delay time: SCLK launch edge to RVS rising | 8.5 | ns | ||
td_CKSTR_f | Delay time: SCLK launch edge to RVS falling | 8.5 | ns | ||
toff_STRDO_f | Time offset: RVS rising to (next) data valid on SDO | –0.5 | 0.5 | ns | |
toff_STRDO_r | Time offset: RVS falling to (next) data valid on SDO | –0.5 | 0.5 | ns |
MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|
TIMING SPECIFICATIONS(1) | ||||||
td_CSSTR | Delay time: CS falling to RVS rising | 12 | 40 | ns | ||
toff_STRDO_f | Time offset: RVS rising to (next) data valid on SDO | –0.5 | 0.5 | ns | ||
toff_STRDO_r | Time offset: RVS falling to (next) data valid on SDO | –0.5 | 0.5 | ns | ||
tSTR | Strobe output time period | INTCLK option | 9.9 | 11.1 | ns | |
INTCLK / 2 option | 19.8 | 22.2 | ||||
INTCLK / 4 option | 39.6 | 44.4 | ||||
tph_STR | Strobe output high time | 0.45 | 0.55 | tSTR | ||
tpl_STR | Strobe output low time | 0.45 | 0.55 | tSTR |
Typical INL = ±0.25 LSB |
120 devices |
VREF = 5 V |
TA = 25°C |
Standard deviation = 0.35 LSB |
fIN = 2 kHz, SNR = 96 dB, THD = –118 dB |
fIN = 2 kHz, VREF = 5 V |
fIN = 2 kHz, TA = 25°C |
VREF = 5 V, TA = 25°C |
3500 devices |
VREF = 5 V |
TA = 25°C |
2.5 MSPS |
2.5 MSPS |
Typical DNL = ±0.25 LSB |
120 devices |
VREF = 5 V |
TA = 25°C |
Standard deviation = 0.35 LSB |
fIN = 100 kHz, SNR = 95.9 dB, THD = –102 dB |
fIN = 2 kHz, VREF = 5 V |
fIN = 2 kHz, TA = 25°C |
VREF = 5 V, TA = 25°C |
3500 devices |
VREF = 5 V |
TA = 25°C |
TA = 25°C |
TA = 25°C |