JAJSDF7A January   2017  – May 2017 LMK61E0M

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      ピン配列と単純なブロック図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics - Power Supply
    6. 6.6  3.3-V LVCMOS Output Characteristics
    7. 6.7  OE Input Characteristics
    8. 6.8  ADD Input Characteristics
    9. 6.9  Frequency Tolerance Characteristics
    10. 6.10 Frequency Margining Characteristics
    11. 6.11 Power-On/Reset Characteristics (VDD)
    12. 6.12 I2C-Compatible Interface Characteristics (SDA, SCL)
    13. 6.13 Other Characteristics
    14. 6.14 PLL Clock Output Jitter Characteristics
    15. 6.15 Additional Reliability and Qualification
    16. 6.16 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Device Output Configurations
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Block-Level Description
      2. 8.3.2  Device Configuration Control
      3. 8.3.3  Register File Reference Convention
      4. 8.3.4  Configuring the PLL
      5. 8.3.5  Integrated Oscillator
      6. 8.3.6  Reference Divider and Doubler
      7. 8.3.7  Phase Frequency Detector
      8. 8.3.8  Feedback Divider (N)
      9. 8.3.9  Fractional Engine
      10. 8.3.10 Charge Pump
      11. 8.3.11 Loop Filter
      12. 8.3.12 VCO Calibration
      13. 8.3.13 High-Speed Output Divider
      14. 8.3.14 High-Speed Clock Output
      15. 8.3.15 Device Status
        1. 8.3.15.1 Loss of Lock
    4. 8.4 Device Functional Modes
      1. 8.4.1 Interface and Control
      2. 8.4.2 DCXO Mode and Frequency Margining
        1. 8.4.2.1 DCXO Mode
        2. 8.4.2.2 Fine Frequency Margining
        3. 8.4.2.3 Coarse Frequency Margining
    5. 8.5 Programming
      1. 8.5.1 I2C Serial Interface
      2. 8.5.2 Block Register Write
      3. 8.5.3 Block Register Read
      4. 8.5.4 Write SRAM
      5. 8.5.5 Write EEPROM
      6. 8.5.6 Read SRAM
      7. 8.5.7 Read EEPROM
    6. 8.6 Register Maps
      1. 8.6.1 Register Descriptions
        1. 8.6.1.1  VNDRID_BY1 Register; R0
        2. 8.6.1.2  VNDRID_BY0 Register; R1
        3. 8.6.1.3  PRODID Register; R2
        4. 8.6.1.4  REVID Register; R3
        5. 8.6.1.5  SLAVEADR Register; R8
        6. 8.6.1.6  EEREV Register; R9
        7. 8.6.1.7  DEV_CTL Register; R10
        8. 8.6.1.8  XO_CAPCTRL_BY1 Register; R16
        9. 8.6.1.9  XO_CAPCTRL_BY0 Register; R17
        10. 8.6.1.10 CMOSCTL Register; R20
        11. 8.6.1.11 DIFFCTL Register; R21
        12. 8.6.1.12 OUTDIV_BY1 Register; R22
        13. 8.6.1.13 OUTDIV_BY0 Register; R23
        14. 8.6.1.14 RDIVCMOSCTL Register; R24
        15. 8.6.1.15 PLL_NDIV_BY1 Register; R25
        16. 8.6.1.16 PLL_NDIV_BY0 Register; R26
        17. 8.6.1.17 PLL_FRACNUM_BY2 Register; R27
        18. 8.6.1.18 PLL_FRACNUM_BY1 Register; R28
        19. 8.6.1.19 PLL_FRACNUM_BY0 Register; R29
        20. 8.6.1.20 PLL_FRACDEN_BY2 Register; R30
        21. 8.6.1.21 PLL_FRACDEN_BY1 Register; R31
        22. 8.6.1.22 PLL_FRACDEN_BY0 Register; R32
        23. 8.6.1.23 PLL_MASHCTRL Register; R33
        24. 8.6.1.24 PLL_CTRL0 Register; R34
        25. 8.6.1.25 PLL_CTRL1 Register; R35
        26. 8.6.1.26 PLL_LF_R2 Register; R36
        27. 8.6.1.27 PLL_LF_C1 Register; R37
        28. 8.6.1.28 PLL_LF_R3 Register; R38
        29. 8.6.1.29 PLL_LF_C3 Register; R39
        30. 8.6.1.30 PLL_CALCTRL Register; R42
        31. 8.6.1.31 NVMSCRC Register; R47
        32. 8.6.1.32 NVMCNT Register; R48
        33. 8.6.1.33 NVMCTL Register; R49
        34. 8.6.1.34 MEMADR Register; R51
        35. 8.6.1.35 NVMDAT Register; R52
        36. 8.6.1.36 RAMDAT Register; R53
        37. 8.6.1.37 NVMUNLK Register; R56
        38. 8.6.1.38 INT_LIVE Register; R66
        39. 8.6.1.39 SWRST Register; R72
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 PLL Loop Filter Design
        2. 9.2.2.2 Spur Mitigation Techniques
          1. 9.2.2.2.1 Phase Detection Spur
          2. 9.2.2.2.2 Integer Boundary Fractional Spur
          3. 9.2.2.2.3 Primary Fractional Spur
          4. 9.2.2.2.4 Sub-Fractional Spur
        3. 9.2.2.3 Device Programming
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Ensured Thermal Reliability
      2. 11.1.2 Best Practices for Signal Integrity
      3. 11.1.3 Recommended Solder Reflow Profile
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

8.5.7 Read EEPROM

The contents of the EEPROM can be read out, one word at a time, starting with that of the requested address. Following details the programming sequence for an EEPROM read by address.

  1. Write the EEPROM address in R51.
  2. The EEPROM data located at the address specified in the step above can be obtained by reading R52 in the same I2C transaction. Any additional access that is part of the same transaction will cause the EEPROM address to be incremented and a read will take place of the next EEPROM address. Access to EEPROM will terminate at the end of current I2C transaction.

NOTE

It is possible to increment EEPROM address incorrectly when 2 successive accesses are made to R51.