JAJSE13B October   2017  – July 2018 UCC21520-Q1

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     機能ブロック図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Propagation Delay and Pulse Width Distortion
    2. 8.2 Rising and Falling Time
    3. 8.3 Input and Disable Response Time
    4. 8.4 Programable Dead Time
    5. 8.5 Power-up UVLO Delay to OUTPUT
    6. 8.6 CMTI Testing
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC21520-Q1
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead Time (DT) Pin
        1. 9.4.2.1 Tying the DT Pin to VCC
        2. 9.4.2.2 DT Pin Left Open or Connected to a Programming Resistor between DT and GND Pins
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 10.2.2.3 Gate Driver Output Resistor
        4. 10.2.2.4 Estimate Gate Driver Power Loss
        5. 10.2.2.5 Estimating Junction Temperature
        6. 10.2.2.6 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.6.1 Selecting a VCCI Capacitor
          2. 10.2.2.6.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.6.3 Select a VDDB Capacitor
        7. 10.2.2.7 Dead Time Setting Guidelines
        8. 10.2.2.8 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 ドキュメントのサポート
      1. 13.1.1 関連資料
    2. 13.2 認定
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

7.10 Switching Characteristics

VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tRISE Output rise time, 20% to 80% measured points COUT = 1.8 nF 6 16 ns
tFALL Output fall time, 90% to 10% measured points COUT = 1.8 nF 7 12 ns
tPWmin Minimum pulse width Output off for less than minimum, COUT = 0 pF 20 ns
tPDHL Propagation delay from INx to OUTx falling edges 19 30 ns
tPDLH Propagation delay from INx to OUTx rising edges 19 30 ns
tPWD Pulse width distortion |tPDLH – tPDHL| 6 ns
tDM Propagation delays matching between VOUTA, VOUTB f = 100 kHz 5 ns
|CMH| High-level common-mode transient immunity INA and INB both are tied to VCCI; VCM=1500V; (See CMTI Testing) 100 V/ns
|CML| Low-level common-mode transient immunity INA and INB both are tied to GND; VCM=1500V; (See CMTI Testing) 100