JAJSER4B February   2018  – October 2018 LMG1020

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      LiDARドライバ段の概略図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Stage
      2. 7.3.2 Output Stage
      3. 7.3.3 VDD and undervoltage lockout
      4. 7.3.4 Overtemperature Protection (OTP)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Handling Ground Bounce
        2. 8.2.2.2 Creating Nanosecond Pulse With LMG1020
      3. 8.2.3 VDD and Overshoot
      4. 8.2.4 Operating at Higher Frequency
      5. 8.2.5 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Gate Drive Loop Inductance and Ground Connection
      2. 10.1.2 Bypass Capacitor
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

6.5 Electrical Characteristics

over operating free-air temperature range (VDD=5V unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC Characteristics
IVDD, Q VDD Quiescent Current IN+ = IN- = 0 V 75 µA
IVDD, op VDD Operating Current(1) fsw = 30 MHz, 2 Ω, 0.1 pF load 40 mA
fsw = 30 MHz, 2 Ω, 100 pF load 51 mA
VDD, UVLO Under-voltage Lockout VDD rising 4.06 4.19 4.33 V
ΔVDD, UVLO UVLO Hysteresis 85 mV
TOTP Over temperature shutdown, rising edge threshold 170 °C
ΔTOTP Over temperature hysteresis 18 °C
Input DC Characteristics
VIH IN+, IN- high threshold 1.7 2.6 V
VIL IN+, IN- low threshold 1.1 1.8 V
VHYST IN+, IN- hysteresis 0.5 1 V
RIN+ Positive input pull-down resistance To GND 100 150 250 kΩ
RIN- Negative input pull-up resistance to VDD 100 150 250 kΩ
CIN Input pin capacitance(1) To GND 1.3 pF
Output DC Characteristics
VOL OUTL voltage IOUTL = 100 mA, IN+= IN- = 0 V 36 mV
VDD-VOH OUTH voltage IOUTH = 100 mA, IN+= 5 V, IN- = 0 V 50 mV
IOH Peak source current(1) VOUTH = 0 V, IN+= 5 V, IN- = 0 V 7 A
IOL Peak sink current​​​​(1) VOUTL = 5 V, IN+= IN- = 0 V 5 A
(1) Insured by design