JAJSFI8A July   2018  – December 2018 INA253

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     代表的なアプリケーション
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Shunt Resistor
      2. 8.3.2 Short-Circuit Duration
      3. 8.3.3 Temperature Stability
      4. 8.3.4 Enhanced PWM Rejection Operation
      5. 8.3.5 Input Signal Bandwidth
    4. 8.4 Device Functional Modes
      1. 8.4.1 Adjusting the Output Midpoint With the Reference Pins
      2. 8.4.2 Reference Pin Connections for Unidirectional Current Measurements
      3. 8.4.3 Ground Referenced Output
      4. 8.4.4 Reference Pin Connections for Bidirectional Current Measurements
        1. 8.4.4.1 Output Set to External Reference Voltage
      5. 8.4.5 Output Set to Mid-Supply Voltage
      6. 8.4.6 Output Set to Mid-External Reference
      7. 8.4.7 Output Set Using Resistor Divide
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Filtering
    2. 9.2 Typical Applications
      1. 9.2.1 High-Side, High-Drive, Solenoid Current-Sense Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Speaker Enhancements and Diagnostics Using Current Sense Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
      3. 9.2.3 Current Sensing for Remote I/Os in PLC
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 開発サポート
    2. 12.2 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

7.5 Electrical Characteristics

at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range VIN+ = –4 V to +80 V, ISENSE = 0 A,
TA = –40°C to +125°C		 –4 80 V
CMR Common-mode rejection VIN+ = –4 V to +80 V, ISENSE = 0 A,
TA = –40°C to +125°C		 ±125 ±500 µA/V
f = 50 kHz ±13 mA/V
IOS Offset current, input-referred ISENSE = 0 A ±2.5 ±15 mA
dIOS/dT Offset current drift ISENSE = 0 A, TA = –40°C to +125°C 25 125 µA/°C
PSRR Power-supply rejection ratio VS = 2.7 V to 5.5 V, ISENSE = 0 A ±0.5 ±5 mA/V
IB Input bias current IB+, IB–, ISENSE = 0 A 90 µA
Reference input range 0 VS V
SHUNT RESISTOR
RSHUNT Shunt resistance (SH+ to SH–) Equivalent resistance when used with onboard amplifier 1.998 2 2.002 mΩ
Used as stand-alone resistor(1) 1.9 2 2.1
Package resistance IS+ to IS– 4.5 mΩ
Package inductance IS+ to IS– 3 nH
Resistor temperature coefficient TA = –40°C to +125°C 15 ppm/°C
TA = –40°C to 0°C 50
TA = 0°C to 125°C 10 ppm/°C
ISENSE Maximum continuous current(2) TA = –40°C to +85°C ±15 A
Shunt short time overload ISENSE = 30 A for 5 seconds ±0.05%
Shunt thermal shock –65°C to +150°C, 500 cycles ±0.1%
Shunt resistance to solder heat 260°C solder, 10 seconds ±0.1%
Shunt high temperature exposure 1000 hours, TA = 150°C ±0.15%
Shunt cold temperature storage 24 hours, TA = –65°C ±0.025%
OUTPUT
G Gain INA253A1 100 mV/A
INA253A2 200
INA253A3 400 mV/A
System gain error(3) GND + 50 mV ≤ VOUT ≤ VS – 200 mV, 
TA = 25°C		 ±0.05% ±0.4%
TA = –40°C to +125°C ±45 ppm/°C
Nonlinearity error GND + 10 mV ≤ VOUT ≤ VS – 200 mV ±0.01%
Reference divider accuracy VOUT = |(VREF1 – VREF2)| / 2 at ISENSE = 0 A, 
TA = –40°C to +125°C		 0.02% 0.1%
RVRR Reference voltage rejection ratio (input-referred) INA253A2 2.5 mA/V
INA253A1, INA253A3 1
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT
Swing to VS power-supply rail RL = 10 kΩ to GND, TA = –40°C to +125°C VS – 0.05 VS – 0.2 V
Swing to GND RL = 10 kΩ to GND, ISENSE = 0 A,
VREF1 = VREF2 = 0 V, TA = –40°C to +125°C		 VGND + 1 VGND + 10 mV
FREQUENCY RESPONSE
BW Bandwidth(4) All gains, –3-dB bandwidth 350 kHz
All gains, 2% THD+N(4) 100 kHz
Output settling time Settles to 0.5% of final value 10 µs
SR Slew rate 2.4 V/µs
NOISE (Input Referred)
Voltage noise density 40 nV/√Hz
POWER SUPPLY
VS Operating voltage range TA = –40°C to +125°C 2.7 5.5 V
IQ Quiescent current ISENSE = 0 A 1.8 2.4 mA
IQ vs temperature, TA = –40°C to +125°C   2.6
(1) The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistorsection for more information.
(2) See Maximum Continuous Currentfor additional information on the current derating and review layout recommendations to improve the current handling capability of the device at higher temperatures.
(3) System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical Characteristicstable.
(4) See Bandwidthsection for more details.