JAJSG06E April   2016  – October 2018 LMG3410R070 , LMG3411R070

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      ブロック概略図
      2.      100V/nsを超えるスイッチング性能
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Switching Parameters
      1. 8.1.1 Turn-on Delays
      2. 8.1.2 Turn-off Delays
      3. 8.1.3 Drain Slew Rate
      4. 8.1.4 Turn-on and Turn-off Energy
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Direct-Drive GaN Architecture
      2. 9.3.2 Internal Buck-Boost DC-DC Converter
      3. 9.3.3 Internal Auxiliary LDO
      4. 9.3.4 Fault Detection
        1. 9.3.4.1 Over-current Protection
        2. 9.3.4.2 Over-Temperature Protection and UVLO
      5. 9.3.5 Drive Strength Adjustment
    4. 9.4 Device Functional Modes
      1. 9.4.1 Low-Power Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Slew Rate Selection
          1. 10.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 10.2.2.2 Signal Level-Shifting
        3. 10.2.2.3 Buck-Boost Converter Design
      3. 10.2.3 Application Curves
    3. 10.3 Paralleling GaN Devices
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Using an Isolated Power Supply
    2. 11.2 Using a Bootstrap Diode
      1. 11.2.1 Diode Selection
      2. 11.2.2 Managing the Bootstrap Voltage
      3. 11.2.3 Reliable Bootstrap Start-up
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Power Loop Inductance
      2. 12.1.2 Signal Ground Connection
      3. 12.1.3 Bypass Capacitors
      4. 12.1.4 Switch-Node Capacitance
      5. 12.1.5 Signal Integrity
      6. 12.1.6 High-Voltage Spacing
      7. 12.1.7 Thermal Recommendations
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

12.1.1 Power Loop Inductance

The power loop, comprising the two devices in the half bridge and the high-voltage bus capacitance, undergoes large di/dt during switching events. By minimizing the inductance of this loop, ringing and electro-magnetic interference (EMI) can be reduced, as well as reducing voltage stress on the devices.

This loop inductance is minimized by locating the power devices as close together as possible. The bus capacitance is positioned in line with the two devices, either below the low-side device or above the high-side device, on the same side of the PCB. The return path (PGND in this case) is located on the second layer on the PCB in close proximity to the top layer. By using an inner layer and not the bottom layer, the vertical dimension of the loop is reduced, thus minimizing inductance. A large number of vias near both the device terminal and bus capacitance carries the high-frequency switching current to the inner layer while minimizing impedance.