JAJSG97A September   2018  – March 2019 LMG3410R050 , LMG3411R050

ADVANCE INFORMATION for pre-production products; subject to change without notice.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      ブロック概略図
      2.      100V/nsを超えるスイッチング性能
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-on Delays
      2. 7.1.2 Turn-off Delays
      3. 7.1.3 Drain Slew Rate
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Fault Detection
        1. 8.3.4.1 Over-current Protection
        2. 8.3.4.2 Over-Temperature Protection and UVLO
      5. 8.3.5 Drive Strength Adjustment
    4. 8.4 Device Functional Modes
      1. 8.4.1 Low-Power Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
    3. 9.3 Paralleling GaN Devices
    4. 9.4 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
      1. 10.2.1 Diode Selection
      2. 10.2.2 Managing the Bootstrap Voltage
      3. 10.2.3 Reliable Bootstrap Start-up
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Loop Inductance
      2. 11.1.2 Signal Ground Connection
      3. 11.1.3 Bypass Capacitors
      4. 11.1.4 Switch-Node Capacitance
      5. 11.1.5 Signal Integrity
      6. 11.1.6 High-Voltage Spacing
      7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

7.1.3 Drain Slew Rate

The slew rate, measured in volts per nanosecond, is measured on the turn-on edge of the LMG341xR050. The slew rate is considered over the VDS fall time, where the drain falls from 80 percent to 20 percent of the bus voltage. The drain slew rate is thus given by 60 percent of the bus voltage divided by the VDS fall time. This drain slew rate is dependent on the RDRV value and is only slightly affected by drain current. Please refer to for the RDRV that is matched with the needed slew rate.