JAJSIA4C December 2019 – June 2022 TLIN2021-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RXD Output Terminal | ||||||
VOL | Low-level voltage | Based upon external pull-up to VCC(3) | 0.6 | V | ||
IOL | Low-level output current, open drain | LIN = 0 V, RXD = 0.4 V | 1.5 | mA | ||
ILKG | Leakage current, high-level | LIN = VSUP, RXD = VCC | –5 | 5 | µA | |
TXD Input Terminal | ||||||
VIL | Low-level input voltage | 0.8 | V | |||
VIH | High-level input voltage | 2 | V | |||
ILKG | Low-level input leakage current | TXD = 0 V | –5 | 5 | µA | |
ITXD(WAKE) | Local wake-up source recognition TXD(4) | Standby mode after a local wake-up event VLIN = VSUP, WAKE = 0 V or VSUP, TXD = 1 V |
1.3 | 8 | mA | |
RTXD | Internal pull-down resistor value | 125 | 350 | 800 | kΩ | |
EN Input Terminal | ||||||
VIL | Low-level input voltage | –0.3 | 0.8 | V | ||
VIH | High-level input voltage | 2 | 5.25 | V | ||
VHYS | Hysteresis voltage | By design and characterization | 30 | 500 | mV | |
IIL | Low-level input current | EN = 0 V | –5 | 5 | µA | |
REN | Internal pull-down resistor | 125 | 350 | 800 | kΩ | |
LIN Terminal (Referenced to VSUP) | ||||||
VOH | LIN recessive high-level output voltage | TXD = VCC, IO = 0 mA, VSUP = 7 V to 45 V | 0.85 | VSUP | ||
VOH | LIN recessive high-level output voltage | TXD = VCC, IO = 0 mA, 4.5 V ≤ VSUP ≤ 7 V | 3 | V | ||
VOL | LIN dominant low-level output voltage | TXD = 0 V, VSUP = 7 V to 45 V | 0.2 | VSUP | ||
VOL | LIN dominant low-level output voltage | TXD = 0 V, 4.5 V ≤ VSUP ≤ 7 V | 1.2 | V | ||
VSUP_NON_OP | VSUP where impact of recessive LIN bus < 5% ISO 17987 Param 54/56 |
TXD & RXD open LIN = 4.5 V to 60 V | –0.3 | 60 | V | |
IBUS(LIM) | Limiting current ISO 17987 Param 57 |
TXD = 0 V, VLIN = 36 V, RMEAS = 480 Ω,
VSUP = 36 V, VBUSdom < 10.224 V See Figure 8-6 |
75 | 120 | 300 | mA |
IBUS_PAS_dom | Receiver leakage current, dominant ISO 17987 Param 58 |
Driver off/recessive, LIN = 0 V, VSUP = 24 V See Figure 8-7 |
–1 | mA | ||
IBUS_PAS_rec1 | Receiver leakage current, recessive ISO 17987 Param 59 |
Driver off/recessive, LIN ≥ VSUP, 4.5 V ≤
VSUP ≤ 45 V See Figure 8-8 |
20 | µA | ||
IBUS_PAS_rec2 | Receiver
leakage current, recessive ISO 17987 Param 59 |
Driver
off/recessive, LIN = VSUP See Figure 8-8 |
–5 | 5 | µA | |
IBUS_NO_GND | Leakage
current, loss of ground ISO 17987 Param 60 |
GND =
VSUP = 27 V, 0 V ≤ VLIN ≤ 36 V See Figure 8-9 |
–1.5 | 1.5 | mA | |
IBUS_NO_BAT | Leakage
current, loss of supply ISO 17987 Param 61 |
VSUP = GND, 0 V ≤ VLIN ≤ 36 V See Figure 8-9 |
5 | µA | ||
VBUSdom | Low-level
input voltage ISO 17987 Param 62 |
LIN dominant
(including LIN dominant for wake up) See Figure 8-3 and Figure 8-4 |
0.4 | VSUP | ||
VBUSrec | High-level
input voltage ISO 17987 Param 63 |
Lin
recessive See Figure 8-3 and Figure 8-4 |
0.6 | VSUP | ||
VBUS_CNT | Receiver
center threshold ISO 17987 Param 64 |
VBUS_CNT = (VBUSrec +
VBUSdom)/2 See Figure 8-3 and Figure 8-4 |
0.475 | 0.5 | 0.525 | VSUP |
VHYS | Hysteresis
voltage ISO 17987 Param 65 |
VHYS = VBUSrec - VBUSdom See Figure 8-3 and Figure 8-4 |
0.175 | VSUP | ||
VSERIAL_DIODE | Serial diode LIN termination pull-up path | ISERIAL_DIODE = 10 µA | 0.4 | 0.7 | 1.0 | V |
RResponder | Pull-up resistor to VSUP | Normal and standby modes | 20 | 45 | 60 | kΩ |
IRSLEEP | Pull-up current source to VSUP sleep mode | VSUP = 27 V, LIN = GND | –20 | –1.5 | µA | |
CLIN | Capacitance of the LIN pin | 25 |
pF | |||
INH Output Terminal | ||||||
ΔVH | High level voltage drop INH with respect to VSUP | IINH = - 0.5 mA | 0.5 | 1 | V | |
ILKG(INH) | Leakage current sleep mode | INH = 0 V | –0.5 | 0.5 | µA | |
WAKE Input Terminal | ||||||
VIH | High-level input voltage | Standby and sleep mode | VSUP – 1.8 | V | ||
VIL | Low-level input voltage | Standby and sleep mode | VSUP – 3.85 | V | ||
IIH | High-level input leakage current | WAKE = VSUP - 1 V | –25 | –12.5 | µA | |
IIL | Ligh-level input leakage current | WAKE = 1 V | 15 | 25 | µA | |
tWAKE | WAKE hold time | Wake up time from sleep mode | 5 | 50 | µs | |
Duty Cycle Characteristics(5) | ||||||
D112V | Duty Cycle 1 ISO 17987 Param 27(1) |
THREC(MAX) = 0.744 x VSUP, THDOM(MAX) = 0.581 x VSUP, VSUP = 7 V to 18 V, tBIT = 50 µs (20 kbps), D1 = tBUS_rec(min)/(2 x tBIT) See Figure 8-10 and Figure 8-11 |
0.396 | |||
D112V | Duty Cycle 1 | THREC(MAX) = 0.625 x VSUP, THDOM(MAX) = 0.581 x VSUP, VSUP = 4.5 V to 7 V, tBIT = 50 µs (20 kbps), D1 = tBUS_rec(min)/(2 x tBIT) See Figure 8-10 and Figure 8-11 |
0.396 | |||
D212V | Duty Cycle 2 ISO 17987 Param 28 |
THREC(MIN) = 0.422 x VSUP, THDOM(MIN) = 0.284 x VSUP, VSUP = 4.5 V to 18 V, tBIT = 50 µs (20 kbps), D2 = tBUS_rec(MAX)/(2 x tBIT) See Figure 8-10 and Figure 8-11 |
0.581 | |||
D312V | Duty Cycle 3 ISO 17987 Param 29(2) |
THREC(MAX) = 0.778 x VSUP, THDOM(MAX) = 0.616 x VSUP, VSUP = 7 V to 18 V, tBIT = 96 µs (10.4 kbps), D3 = tBUS_rec(min)/(2 x tBIT) See Figure 8-10 and Figure 8-11 |
0.417 | |||
D312V | Duty Cycle 3 | THREC(MAX) = 0.645 x VSUP,
THDOM(MAX) = 0.616 x VSUP, VSUP
= 4.5 V to 7 V, tBIT = 96 µs (10.4 kbps), D3 = tBUS_rec(min)/(2 x tBIT) See Figure 8-10 and Figure 8-11 |
0.417 | |||
D412V | Duty Cycle 4 ISO 17987 Param 30 |
THREC(MIN) = 0.389 x VSUP, THDOM(MIN) = 0.251 x VSUP, VSUP = 7 V to 18 V, tBIT = 96 µs (10.4 kbps), D4 = tBUS_rec(MAX)/(2 x tBIT) See Figure 8-10 and Figure 8-11 |
0.59 | |||
D412V | Duty Cycle 4 | THREC(MIN) = 0.422 x VSUP, THDOM(MIN) = 0.284 x VSUP, VSUP = 4.5 V to 7 V, tBIT = 96 µs (10.4 kbps), D4 = tBUS_rec(MAX)/(2 x tBIT) See Figure 8-10 and Figure 8-11 |
0.59 | |||
D124V | Duty Cycle 1 ISO 17987 Param 72 |
THREC(MAX) = 0.710 x VSUP, THDOM(MAX) = 0.554 x VSUP, VSUP = 15 V to 36 V, tBIT = 50 µs, D1 = tBUS_rec(MIN)/(2 x tBIT) See Figure 8-12 and Figure 8-13 |
0.330 | |||
D224V | Duty Cycle 2 ISO 17987 Param 73 |
THREC(MIN) = 0.446 x VSUP, THDOM(MIN) = 0.302 x VSUP, VSUP = 15.6 V to 36 V, tBIT = 50 µs, D2 = tBUS_rec(MAX)/(2 x tBIT) See Figure 8-12 and Figure 8-13 |
0.642 | |||
D324V | Duty Cycle 3 ISO 17987 Param 74 |
THREC(MAX) = 0.744 x VSUP, THDOM(MAX) = 0.581 x VSUP, VSUP = 7 V to 36 V, tBIT = 96 µs, D3 = tBUS_rec(min)/(2 x tBIT) See Figure 8-12 and Figure 8-13 |
0.386 | |||
D324V | Duty Cycle 3 | THREC(MAX) = 0.645 x VSUP, THDOM(MAX) = 0.581 x VSUP, VSUP = 4.5 V to 7 V, tBIT = 96 µs, D3 = tBUS_rec(min)/(2 x tBIT) See Figure 8-12 and Figure 8-13 |
0.386 | |||
D424V | Duty Cycle 4 ISO 17987 Param 75 |
THREC(MIN) = 0.422 x VSUP, THDOM(MIN) = 0.284 x VSUP, VSUP = 4.5 V to 36 V, tBIT = 96 µs, D4 = tBUS_rec(MAX)/(2 x tBIT) See Figure 8-12 and Figure 8-13 |
0.591 |