JAJSKR9B June   2007  – July 2021 TRS3221E

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  ESD Ratings, IEC Specifications
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Electrical Characteristics
    7. 6.7  Driver Section Electrical Characteristics
    8. 6.8  Driver Section Switching Characteristics
    9. 6.9  Receiver Section Electrical Characteristics
    10. 6.10 Receiver Section Switching Characteristics
    11. 6.11 Auto-Powerdown Section Electrical Characteristics
    12. 6.12 Auto-Powerdown Section Switching Characteristics
    13. 6.13 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power
      2. 8.3.2 RS232 Driver
      3. 8.3.3 RS232 Receiver
      4. 8.3.4 RS232 Status
    4. 8.4 Device Functional Modes
  9. 9 Application Information Disclaimer
    1. 9.1 Application Information
    2. 9.2 Typical Application
    3. 9.3 Design Requirements
    4. 9.4 Detailed Design Procedure
    5. 9.5 Application Curve
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 サポート・リソース
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6.7 Driver Section Electrical Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 9-1)
PARAMETER TEST CONDITIONS(3) MIN TYP(1) MAX UNIT
VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.4 V
VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC –5 –5.4 V
IIH High-level input current VI = VCC ±0.01 ±1 μA
IIL Low-level input current VI = GND ±0.01 ±1 μA
IOS Short-circuit
output current(2)		 VCC = 3.6 V, VO = 0 V ±35 ±60 mA
VCC = 5.5 V, VO = 0 V ±35 ±60
ro Output resistance VCC, V+, and V– = 0 V, VO = ±2 V 300 10M Ω
Ioff Output leakage current FORCEOFF = GND VO = ±12 V, VCC = 3 V to 3.6 V ±25 μA
VO = ±10 V, VCC = 4.5 V to 5.5 V ±25
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time.
(3) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.