JAJSL62 February   2021 INA183

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Single-Supply Operation from IN+
      2. 8.3.2 Low Gain Error and Offset Voltage
      3. 8.3.3 Low Drift Architecture
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Unidirectional, High-Side Operation
      3. 8.4.3 Input Differential Overload
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 RSENSE and Device Gain Selection
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 用語集
  13. 13Mechanical, Packaging, and Orderable Information

8.3.3 Low Drift Architecture

The INA183 features low drift for both the gain error and offset voltage specifications. The low gain error drift of 10 PPM/ºC results from the well matched internal resistor network that sets the device gain. The low offset drift is due to the internal chopping architecture of the amplifier. Input chopping reduces both the offset and offset drift since any change in offset is canceled with each chopping cycle. The maximum input offset drift of the INA183 is 0.5 μV/ºC. The low drift of the gain error and offset voltage provides accurate current measurement over the operational temperature range of -40ºC to 125ºC that exceeds the performance of most discrete current sensing implementations.