JAJSL98D
October 2020 – February 2024
LMG3522R030-Q1
PRODUCTION DATA
1
1
特長
2
アプリケーション
3
概要
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Switching Characteristics
5.7
Typical Characteristics
6
Parameter Measurement Information
6.1
Switching Parameters
6.1.1
Turn-On Times
6.1.2
Turn-Off Times
6.1.3
Drain-Source Turn-On Slew Rate
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
GaN FET Operation Definitions
7.3.2
Direct-Drive GaN Architecture
7.3.3
Drain-Source Voltage Capability
7.3.4
Internal Buck-Boost DC-DC Converter
7.3.5
VDD Bias Supply
7.3.6
Auxiliary LDO
7.3.7
Fault Detection
7.3.7.1
Overcurrent Protection and Short-Circuit Protection
7.3.7.2
Overtemperature Shutdown
7.3.7.3
UVLO Protection
7.3.7.4
Fault Reporting
7.3.8
Drive-Strength Adjustment
7.3.9
Temperature-Sensing Output
7.3.10
Ideal-Diode Mode Operation
7.3.10.1
Overtemperature-Shutdown Ideal-Diode Mode
7.4
Start-Up Sequence
7.5
Safe Operation Area (SOA)
7.5.1
Repetitive SOA
7.6
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Slew Rate Selection
8.2.2.1.1
Start-Up and Slew Rate With Bootstrap High-Side Supply
8.2.2.2
Signal Level-Shifting
8.2.2.3
Buck-Boost Converter Design
8.2.3
Application Curves
8.3
Do's and Don'ts
8.4
Power Supply Recommendations
8.4.1
Using an Isolated Power Supply
8.4.2
Using a Bootstrap Diode
8.4.2.1
Diode Selection
8.4.2.2
Managing the Bootstrap Voltage
8.5
Layout
8.5.1
Layout Guidelines
8.5.1.1
Solder-Joint Reliability
8.5.1.2
Power-Loop Inductance
8.5.1.3
Signal-Ground Connection
8.5.1.4
Bypass Capacitors
8.5.1.5
Switch-Node Capacitance
8.5.1.6
Signal Integrity
8.5.1.7
High-Voltage Spacing
8.5.1.8
Thermal Recommendations
8.5.2
Layout Examples
9
Device and Documentation Support
9.1
Documentation Support
9.1.1
Related Documentation
9.2
ドキュメントの更新通知を受け取る方法
9.3
サポート・リソース
9.4
Trademarks
9.5
静電気放電に関する注意事項
9.6
Export Control Notice
9.7
用語集
10
Revision History
11
Mechanical, Packaging, and Orderable Information
9.1.1
Related Documentation
Texas Instruments,
High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FET
application note
Texas Instruments,
A New Approach to Validate GaN FET Reliability to Power-line Surges Under Use-conditions
Texas Instruments,
Achieving GaN Products With Lifetime Reliability
Texas Instruments,
Direct-drive configuration for GaN devices