JAJSMX1B September   2021  – March 2022 LM74720-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dual Gate Control (GATE, PD)
        1. 8.3.1.1 Reverse Battery Protection (A, C, GATE)
        2. 8.3.1.2 Load Disconnect Switch Control (PD)
      2. 8.3.2 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      3. 8.3.3 Boost Regulator
    4. 8.4 Device Functional Mode (Shutdown Mode)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
      2. 9.2.2 Automotive Reverse Battery Protection
        1. 9.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 9.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 9.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Design Considerations
        2. 9.2.3.2 Boost Converter Components (C2, C3, L1)
        3. 9.2.3.3 Input and Output Capacitance
        4. 9.2.3.4 Hold-Up Capacitance
        5. 9.2.3.5 Overvoltage Protection and Battery Monitor
        6. 9.2.3.6 MOSFET Selection: Blocking MOSFET Q1
        7. 9.2.3.7 MOSFET Selection: Load Disconnect MOSFET Q2
        8. 9.2.3.8 TVS Selection
      4. 9.2.4 Application Curves
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 TVS Selection for 12-V Battery Systems
    3. 10.3 TVS Selection for 24-V Battery Systems
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

TJ = –40°C to +125°C; typical values at TJ = 25°C, V(A) = V(VS) = 12 V, C(CAP) = 1 µF, V(EN) = 2 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE 
V(A POR) VA POR Rising threshold 3.1 3.4 3.85 V
VA POR Falling threshold 2.2 2.6 2.9 V
V(VS) Minimum Voltage at VS 3 V
I(SHDN) Shutdown Supply Current V(EN) = 0 V 1.5 3.3 µA
I(Q) Total System Quiescent Current V(EN) = 2 V, Active Rectifier Controller In Regulation, –40°C ≤ TJ ≤ +85°C 27 32 µA
V(EN) = 2 V, Active Rectifier Controller In Regulation, –40°C ≤ TJ ≤ +125°C 27 35 µA
ENABLE INPUT
V(EN_IH) Enable input high threshold 2 V
V(EN_IL) Enable input low threshold 0.5 0.85 1.2
V(EN_Hys) Enable Hysteresis 380 mV
I(EN) Enable sink current V(EN) = 12 V 52 155 nA
VANODE to VCATHODE (VA – C)
V(AC REG) Regulated Forward V(AC) Threshold 9 16.4 22.7 mV
V(AC_FWD) V(AC) threshold from RCB to oFCB 75 105 140 mV
V(AC_REV) V(AC) threshold for reverse current blocking –12 –5.65 –1.3 mV
GATE DRIVE
V(GATE) – V(A) 3 V < V(VS) < 65 V 9.5 13 V
I(GATE) Peak sink current V(A) – V(C) = –20 mV 2.5 A
Regulation max sink current V(A) – V(C) = 0 V, 
V(GATE) – V(A) = 5 V 		 14 26 39 µA
RGATE GATE pulldown resistance V(A) – V(C) = –20 mV, 
V(GATE) – V(A) = 100 mV		 1.2 Ω
BOOST REGULATOR 
V(CAP) –  V(VS) Boost output rising threshold 13 15.5 V
Hysteresis 1.1 V
I(CAP) Boost load capacity V(CAP) – V(VS)  = 7.5 V 29 mA
I(LX) Peak inductor current limit threshold V(VS) = 12 V 110 140 170 mA
V(VS) = 3 V 210 mA
R(LX) Low side switch On-Resistance 1.3 2.7 5.1 Ω
BATTERY SENSING (VSNS, SW) AND OVER VOLTAGE DETECTION (OV, PD)
R(SW) Battery sensing disconnect switch resistance 104 226 430 Ω
V(OVR) Overvoltage threshold input, rising 1.13 1.231 1.33 V
V(OVF) Overvoltage threshold input, falling 1.03 1.125 1.215 V
V(OV_Hys) OV Hysteresis 110 mV
I(OV) OV Input leakage current 0 V < V(OV) < 5 V 50 110 nA
I(PD_SRC) Pullup current 3 V < V(VS) < 65 V 43 50 60 µA
I(PD_SINK) Peak pulldown current V(OV) > V(OVR) 55 88 117 mA
DC pulldown current 7 10 14 mA
CATHODE (C)
I(C) CATHODE sink current V(A) = 12 V, V(A) – V(C) = –100 mV 8.5 15 µA
V(A) = –14 V, V(C) = 14 V 10.6 18 µA