JAJSOG2 March   2022 CC2651P3

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 説明
  4. 機能ブロック図
  5. Revision History
  6. Device Comparison
  7. Pin Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Pin Diagram – RKP Package (Top View)
    4. 7.4 Signal Descriptions – RKP Package
    5. 7.5 Connections for Unused Pins and Modules
  8. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 Bluetooth Low Energy - Receive (RX)
    11. 8.11 Bluetooth Low Energy - Transmit (TX)
    12. 8.12 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    13. 8.13 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    14. 8.14 Timing and Switching Characteristics
      1. 8.14.1 Reset Timing
      2. 8.14.2 Wakeup Timing
      3. 8.14.3 Clock Specifications
        1. 8.14.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.14.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.14.3.3 32.768 kHz Crystal Oscillator (XOSC_LF)
        4. 8.14.3.4 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       37
      5. 8.14.5 UART
        1. 8.14.5.1 UART Characteristics
    15. 8.15 Peripheral Characteristics
      1. 8.15.1 ADC
        1. 8.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.15.2 DAC
        1. 8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.15.3 Temperature and Battery Monitor
        1. 8.15.3.1 Temperature Sensor
        2. 8.15.3.2 Battery Monitor
      4. 8.15.4 Comparator
        1. 8.15.4.1 Continuous Time Comparator
      5. 8.15.5 GPIO
        1. 8.15.5.1 GPIO DC Characteristics
    16. 8.16 Typical Characteristics
      1. 8.16.1 MCU Current
      2. 8.16.2 RX Current
      3. 8.16.3 TX Current
      4. 8.16.4 RX Performance
      5. 8.16.5 TX Performance
      6. 8.16.6 ADC Performance
  9. Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Bluetooth 5.2 Low Energy
      2. 9.3.2 802.15.4 (Zigbee and 6LoWPAN)
    4. 9.4  Memory
    5. 9.5  Cryptography
    6. 9.6  Timers
    7. 9.7  Serial Peripherals and I/O
    8. 9.8  Battery and Temperature Monitor
    9. 9.9  µDMA
    10. 9.10 Debug
    11. 9.11 Power Management
    12. 9.12 Clock Systems
    13. 9.13 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
      1. 11.2.1 SimpleLink™ Microcontroller Platform
    3. 11.3 Documentation Support
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Application, Implementation, and Layout

Note:

以下のアプリケーション情報は、TI の製品仕様に含まれるものではなく、TI ではその正確性または完全性を保証いたしません。個々の目的に対する製品の適合性については、お客様の責任で判断していただくことになります。お客様は自身の設計実装を検証しテストすることで、システムの機能を確認する必要があります。

For general design guidelines and hardware configuration guidelines, refer to CC13xx/CC26xx Hardware Configuration and PCB Design Considerations Application Report.

For optimum RF performance, especially when using the high-power PA, it is important to accurately follow the reference design with respect to component values and layout. Failure to do so may lead to reduced RF performance due to balun mismatch. The amplitude- and phase balance through the balun must be <1 dB and <6 degrees, respectively.

PCB stack-up is also critical for proper operation. The CC2651P3 EVMs and characterization boards use a finished thickness between the top layer (RF signals) and layer 2 (ground plane) of 175 µm. It is very important to use the same substrate thickness, or slightly thicker, in an end product implementing the CC2651P3 device.