JAJSQ94D January   2019  – June 2024 UCC21710-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Regular Turn-OFF
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 Internal On-chip Active Miller Clamp
    4. 6.4 Under Voltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 OC (Over Current) Protection
      1. 6.5.1 OC Protection with Soft Turn-OFF
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  Internal Active Miller Clamp
      7. 7.3.7  Overcurrent and Short Circuit Protection
      8. 7.3.8  Soft Turn-off
      9. 7.3.9  Fault ( FLT, Reset and Enable ( RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input filters for IN+, IN- and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn on and turn off gate resistors
        6. 8.2.2.6 Overcurrent and Short Circuit Protection
          1. 8.2.2.6.1 Protection Based on Power Modules with Integrated SenseFET
          2. 8.2.2.6.2 Protection Based on Desaturation Circuit
          3. 8.2.2.6.3 Protection Based on Shunt Resistor in Power Loop
        7. 8.2.2.7 Isolated Analog Signal Sensing
          1. 8.2.2.7.1 Isolated Temperature Sensing
          2. 8.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 8.2.2.8 Higher Output Current Using an External Current Buffer
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 サード・パーティ製品に関する免責事項
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

7.1 Overview

The UCC21710-Q1 device is an advanced isolated gate driver with state-of-the-art protection and sensing features for SiC MOSFETs and IGBTs. The device can support up to 2121-V DC operating voltage based on SiC MOSFETs and IGBTs, and can be used to above 10-kW applications such as HEV/EV traction inverter, motor drive, on-board and off-board battery charger, solar inverter, etc. The galvanic isolation is implemented by the capacitive isolation technology, which can realize a reliable reinforced isolation between the low voltage DSP/MCU and high voltage side.

The ±10-A peak sink and source current of UCC21710-Q1 can drive the SiC MOSFET modules and IGBT modules directly without an extra buffer. The driver can also drive higher power modules or parallel modules with an external buffer stage. The input side is isolated with the output side with a reinforced isolation barrier, based on capacitive isolation technology. The device can support up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years isolation barrier life. The strong drive strength helps to switch the device fast and reduce the switching loss. While the 150-V/ns minimum CMTI guarantees the reliability of the system with fast switching speed. The small propagation delay and part-to-part skew can minimize the deadtime setting, so the conduction loss can be reduced.

The device includes extensive protection and monitor features to increase the reliability and robustness of the SiC MOSFET and IGBT based systems. The 12-V output side power supply UVLO is suitable for switches with gate voltage ≥ 15 V. The active miller clamp feature prevents the false turn on causing by Miller capacitance during fast switching. An external Miller clamp FET can be used, providing more versatility to the system design. The device has the state-of-the-art overcurrent and short circuit detection time, and fault reporting function to the low voltage side DSP/MCU. The soft turn-offis triggered when the overcurrent or short circuit fault is detected, minimizing the short circuit energy while reducing the overshoot voltage on the switches.

The isolated analog to PWM sensor can be used as a switch temperature sensing, DC bus voltage sensing, auxiliary power supply sensing, and so on. The PWM signal can be fed directly to DSP/MCU or through a low-pass-filter as an analog signal.