JAJSQG0C june   2015  – may 2023 ISO5851

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 概要 (続き)
  7. 6 Pin Configuration and Function
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Characteristics
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Supply and Active Miller Clamp
      2. 9.3.2 Active Output Pulldown
      3. 9.3.3 Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication Output
      4. 9.3.4 Fault ( FLT) and Reset ( RST)
      5. 9.3.5 Short Circuit Clamp
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Recommended ISO5851 Application Circuit
        2. 10.2.2.2  FLT and RDY Pin Circuitry
        3. 10.2.2.3  Driving the Control Inputs
        4. 10.2.2.4  Local Shutdown and Reset
        5. 10.2.2.5  Global-Shutdown and Reset
        6. 10.2.2.6  Auto-Reset
        7. 10.2.2.7  DESAT Pin Protection
        8. 10.2.2.8  DESAT Diode and DESAT Threshold
        9. 10.2.2.9  Determining the Maximum Available, Dynamic Output Power, POD-max
        10. 10.2.2.10 Example
        11. 10.2.2.11 Higher Output Current Using an External Current Buffer
      3. 10.2.3 Application Curves
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 PCB Material
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 サード・パーティ製品に関する免責事項
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 サポート・リソース
    5. 13.5 Trademarks
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 用語集
  15. 14Mechanical, Packaging, and Orderable Information

10.2.2.10 Example

This examples considers an IGBT drive with the following parameters:

Equation 6. ION-PK = 2 A, QG = 650 nC, fINP = 20 kHz, VCC2 = 15 V, VEE2 = –8 V

Applying the value of the gate resistor RG = 10 Ω.

Then, calculating the worst-case output power consumption as a function of RG, using Equation 5 ron-max = worst case output resistance in the on-state: 4 Ω, roff-max = worst case output resistance in the off-state: 2.5 Ω, RG = gate resistor yields

Equation 7. GUID-A36B7C15-0CF4-4BF9-A7C3-5F5F04E39076-low.gif

Because POL-WC = 72.61 mW is below the calculated maximum of POL = 88.25 mW, the resistor value of RG = 10 Ω is suitable for this application.