JAJSR89 August   2024 AMC0106M25

ADVANCE INFORMATION  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information (DEN Package)
    5. 5.5 Package Characteristics
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Timing Diagrams
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Analog Input
      2. 6.3.2 Modulator
      3. 6.3.3 Isolation Channel Signal Transmission
      4. 6.3.4 Digital Output
        1. 6.3.4.1 Output Behavior in Case of a Full-Scale Input
        2. 6.3.4.2 Output Behavior in Case of a Missing High-Side Supply
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Shunt Resistor Sizing
        2. 7.2.2.2 Input Filter Design
        3. 7.2.2.3 Bitstream Filtering
        4. 7.2.2.4 Designing the Bootstrap Supply
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 ドキュメントの更新通知を受け取る方法
    3. 8.3 サポート・リソース
    4. 8.4 Trademarks
    5. 8.5 静電気放電に関する注意事項
    6. 8.6 用語集
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

5.6 Electrical Characteristics

minimum and maximum specifications are at TA = –40°C to 125°C, AVDD = 3.0V to 5.5V, DVDD = 2.7V to 5.5 V, VINP = –250mV to 250mV, VINN = 0V, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications are at TA = 25°C, CLKIN = 20MHz, AVDD = 5V, and DVDD = 3.3V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUTS
CIN Effective input sampling capacitance  2 pF
RIN Input impedance fCLK = 10MHz TBD 50 TBD kΩ
fCLK = 20MHz TBD 25 TBD
IINP Input current VIN = (VINP – VINN) = VFSR, MAX, fCLK = 10MHz TBD 5 TBD μA
VIN = (VINP – VINN) = VFSR, MAX, fCLK = 20MHz TBD 10 TBD
IINN Input current VIN = (VINP – VINN) = VFSR, MAX, fCLK = 10MHz –TBD –5 –TBD μA
VIN = (VINP – VINN) = VFSR, MAX, fCLK = 20MHz –TBD –10 –TBD
CMTI Common-mode transient immunity  150 V/ns
EO Offset error(1) INP = INN = AGND, TA = 25°C –200 ±4.5 200 µV
EG Gain error  TA = 25°C –0.2% ±0.005% 0.2%
EO Offset error(1) INP = INN = AGND, TA = 25°C –200 ±4.5 200 µV
EG Gain error TA = 25°C –0.2% ±0.005% 0.2%
DC ACCURACY
EO Offset error(1)
INP = INN = AGND, TA = 25°C		 –200 ±4.5 200 µV
TCEO Offset error temperature drift(3) –3 3 µV/°C
EG Gain error  TA = 25°C –0.2% ±0.005% 0.2%
TCEG Gain error temperature drift(4) –40 ±20 40 ppm/°C
INL Integral nonlinearity(2) Resolution: 16 bits –4 ±1 4 LSB
DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB
CMRR Common-mode rejection ratio INP = INN, fIN = 0Hz,
VCM min ≤ VIN ≤ VCM max		 –92 dB
INP = INN, fIN from 0.1Hz to 10 kHz,
VCM min ≤ VIN ≤ VCM max		 –95
PSRR Power-supply rejection ratio INP = INN = AGND,
AVDD from 3.0V to 5.5V, DC		 –80 dB
INP = INN = AGND,
AVDD from 3.0V to 5.5V,
10kHz / 100mV ripple		 –80
AC ACCURACY
SNR Signal-to-noise ratio  fIN = 1kHz 86 dB
SINAD Signal-to-noise + distortion  fIN = 1kHz 85.7 dB
THD Total harmonic distortion(5) 4.5V ≤ AVDD ≤ 5.5V, fIN = 1kHz,
5MHz ≤ fCLKIN ≤ 21MHz		 –90 dB
3.0V ≤ AVDD ≤ 3.6V, fIN = 1kHz,
5MHz ≤ fCLKIN ≤ 21MHz		 –93
CMOS LOGIC WITH SCHMITT-TRIGGER
IIN Input current DGND ≤ VIN ≤ DVDD 0 7 μA
CIN Input capacitance 4 pF
VIH High-level input voltage 0.7 × DVDD DVDD + 0.3 V
VIL Low-level input voltage –0.3 0.3 × DVDD V
CLOAD Output load capacitance 30 pF
VOH High-level output voltage IOH = –4mA DVDD – 0.4 V
VOL Low-level output voltage IOL = 4 mA 0.4 V
POWER SUPPLY
IAVDD High-side supply current  6.2 8.8
mA
IDVDD Low-side supply current  CLOAD = 15pF 4.2 6.3
mA
AVDDUV High-side undervoltage detection threshold AVDD rising 2.3 2.55 2.75 V
AVDD falling 2.15 2.35 2.55
DVDDUV Low-side undervoltage detection threshold DVDD rising 2.3 2.55 2.75 V
DVDD falling 2.15 2.35 2.55
(1) This parameter is input referred.
(2) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(3) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCEO = (EO,MAX – EO,MIN) / TempRange where EO,MAX and EO,MIN refer to the maximum and minimum EO values measured within the temperature range (–40 to 125℃).
(4) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = ((EG,MAX - EG,MIN) / TempRange) x 104 where EG,MAX and EG,MIN refer to the maximum and minimum EG values (in %) measured within the temperature range (–40 to 125℃).
(5) THD is the ratio of the rms sum of the amplitudes of first five higher harmonics to the amplitude of the fundamental.