JAJSRP9 September 2024
ADVANCE INFORMATION
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
IQ_VIN | Quiescent current | EN = High, no load, device not switching, TJ = 25℃ | 5.1 | µA | ||
IQ_OUT | Operating quiescent current into OUT pin | EN = High, no load, device not switching, VOUT = 1.8V, TJ = 25℃ | 18 | µA | ||
ISD | Shutdown current | EN = Low, TJ = 25℃ |
0.24 | 0.6 | µA | |
VUVLO | Undervoltage lock out threshold | VIN rising | 2.2 | 2.3 | 2.4 | V |
VIN falling | 2.1 | 2.2 | 2.3 | V | ||
TJSD | Thermal shutdown threshold | TJ rising | 150 | °C | ||
Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
LOGIC INTERFACE | ||||||
VIH | High-level input threshold voltage at EN, SCL, SDA and VSET/MODE | 0.9 | V | |||
VIL | Low-level input threshold voltage at EN, SCL, SDA and VSET/MODE | 0.4 | V | |||
ISCL,LKG | Input leakage current into SCL pin | TJ = 25℃ | 0.01 | 0.2 | uA | |
ISDA,LKG | Input leakage current into SDA pin | TJ = 25℃ | 0.01 | 0.1 | uA | |
IEN,LKG | Input leakage current into EN pin | TJ = 25℃ | 0.01 | 0.1 | µA | |
CSCL | Parasictic capacitance at SCL | 1 | pF | |||
CSDA | Parasictic capacitance at SDA | 2.4 | pF | |||
STARTUP, POWER GOOD | ||||||
tDelay | Enable delay time | Time from EN high to device starts switching 249kΩ resistor connected between VSET/MODE and GND |
420 | 840 | 1200 | µs |
tDelay | Enable delay time | Time from EN high to device starts switching, for I2C devices | 100 | 350 | 900 | us |
tRamp | Output voltage ramp time, TP6286A06 | Time from device starts switching to power good (no external capacitor connected) | 1.5 | ms | ||
tRamp | Output voltage ramp time, TP6286A08, TPS6286A10, TPS6286B08, TPS6286B10 | Time from device starts switching to power good (no external capacitor connected) | 0.5 | ms | ||
VPG | Power-good lower threshold | VOUT referenced to VOUT nominal | 85 | 91 | 96 | % |
Power-good upper threshold | VOUT referenced to VOUT nominal | 103 | 111 | 120 | % | |
VPG,OL | Low-level output voltage | Isink = 1mA | 0.36 | V | ||
Iss | SS pin source current | 20 | µA | |||
tPG,DLY | Power-good deglitch delay | Rising and falling edges | 34 | µs | ||
OUTPUT | ||||||
VOUT | Output voltage accuracy | Fixed voltage operation, FPWM, no load, TJ = 25°C | –0.7 | 0.7 | % | |
VOUT | Output voltage accuracy | Fixed voltage operation, FPWM, no load | –1 | 1 | % | |
VFB | Feedback voltage | Adjustable voltage operation, TJ = 0°C to 85°C | 594 | 600 | 606 | mV |
IFB,LKG | Input leakage into FB pin | Adjustable voltage operation, VFB = 0.6V, TJ = 25℃ | 0.01 | 0.1 | µA | |
RDIS | Output discharge resistor at VOS pin | 4.3 | Ω | |||
Load regulation | VOUT = 0.9V, FPWM | 0.04 | %/A | |||
POWER SWITCH | ||||||
RDS(on) | High-side FET on-resistance | 8 | mΩ | |||
Low-side FET on-resistance | 8 | mΩ | ||||
ILIM | High-side FET forward current limit | TPS6286x06 | 8 | A | ||
ILIM | High-side FET forward current limit | TPS6286x08 | 11 | A | ||
ILIM | High-side FET forward current limit | TPS6286x10 | 14 | A | ||
ILIM | Low-side FET forward current limit | TPS6286x06 | 6.5 | A | ||
ILIM | Low-side FET forward current limit | TPS6286x08 | 9 | A | ||
ILIM | Low-side FET forward current limit | TPS6286x10 | 12 | A | ||
ILIM | Low-side FET negative current limit | TPS6286x06, TPS6286x08, TPS6286x10 | –3 | A | ||
fSW | PWM switching frequency | IOUT = 1A, VOUT = 0.9V | 1.2 | MHz |