JAJSSU0 August   2024 LMR51440-Q1 , LMR51450-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 System Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency Peak Current Mode Control
      2. 7.3.2  Adjustable Output Voltage
      3. 7.3.3  Enable
      4. 7.3.4  Switching Frequency
      5. 7.3.5  Power-Good Flag Output
      6. 7.3.6  Minimum ON-Time, Minimum OFF-Time, and Frequency Foldback
      7. 7.3.7  Bootstrap Voltage
      8. 7.3.8  Overcurrent and Short-Circuit Protection
      9. 7.3.9  Soft Start
      10. 7.3.10 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Active Mode
      3. 7.4.3 CCM Mode
      4. 7.4.4 Light-Load Operation (PFM Version)
      5. 7.4.5 Light-Load Operation (FPWM Version)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Output Voltage Set-Point
        3. 8.2.2.3 Switching Frequency
        4. 8.2.2.4 Inductor Selection
        5. 8.2.2.5 Output Capacitor Selection
        6. 8.2.2.6 Input Capacitor Selection
        7. 8.2.2.7 Bootstrap Capacitor
        8. 8.2.2.8 Undervoltage Lockout Setpoint
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Compact Layout for EMI Reduction
        2. 8.4.1.2 Feedback Resistors
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Custom Design With WEBENCH® Tools
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 ドキュメントの更新通知を受け取る方法
    4. 9.4 サポート・リソース
    5. 9.5 Trademarks
    6. 9.6 静電気放電に関する注意事項
    7. 9.7 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

8.4.1.1 Compact Layout for EMI Reduction

Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger area covered by the path of a pulsing current, the more EMI is generated. High frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of the pulsing current. Placing a ceramic bypass capacitor or capacitors as close as possible to the VIN and PGND pins is the key to EMI reduction.

The SW pin connecting to the inductor must be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) must be used for high current conduction path to minimize parasitic resistance. The output capacitors must be placed close to the VOUT end of the inductor and closely grounded to PGND pin.