JAJSUR2N May   1999  – September 2024 SN74LV4052A

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information: SN74LV4052A
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Electrical Characteristics
    6. 5.6  Timing Characteristics VCC = 2.5 V ± 0.2 V
    7. 5.7  Timing Characteristics VCC = 3.3 V ± 0.3 V
    8. 5.8  Timing Characteristics VCC = 5 V ± 0.5 V
    9. 5.9  AC Characteristics
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER Condition TA VCC MIN TYP MAX UNIT
rON ON-state switch resistance IT = 2 mA,
VI = VCC or GND,
VINH = VIL		 25°C 1.65 V 60 150 Ω
rON ON-state switch resistance IT = 2 mA,
VI = VCC or GND,
VINH = VIL		 –40°C to 85°C 1.65 V 225 Ω
rON ON-state switch resistance  IT = 2 mA,
VI = VCC or GND,
VINH = VIL		 –40°C to 125°C 1.65 V 225 Ω
rON ON-state switch resistance IT = 2 mA,
VI = VCC or GND,
VINH = VIL		 25°C 2.3 V 38 180 Ω
–40°C to 85°C 225
–40°C to 125°C 225
25°C 3 V 30 150 Ω
–40°C to 85°C 190
–40°C to 125°C 190
25°C 4.5 V 22 75 Ω
–40°C to 85°C 100
–40°C to 125°C 100
rON(p) Peak ON-state resistance IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 25°C 1.65 V 220 600 Ω
rON(p) Peak ON-state resistance IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 –40°C to 85°C 1.65 V 700 Ω
rON(p) Peak ON-state resistance IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 –40°C to 125°C 1.65 V 700 Ω
rON(p) Peak ON-state resistance IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 25°C 2.3 V 113 500 Ω
–40°C to 85°C 600
–40°C to 125°C 600
25°C 3 V 54 180 Ω
–40°C to 85°C 225
–40°C to 125°C 225
25°C 4.5 V 31 100 Ω
–40°C to 85°C 125
–40°C to 125°C 125
ΔrON Difference in ON-state resistance between switches IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 25°C 1.65 V 3 40 Ω
ΔrON Difference in ON-state resistance between switches IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 –40°C to 85°C 1.65 V 50 Ω
ΔrON Difference in ON-state resistance between switches IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 –40°C to 85°C 1.65 V 50 Ω
ΔrON Difference in ON-state resistance between switches IT = 2 mA,
VI = GND to VCC,
VINH = VIL		 25°C 2.3 V 2.1 30 Ω
–40°C to 85°C 40
–40°C to 125°C 40
25°C 3 V 1.4 20 Ω
–40°C to 85°C 30
–40°C to 125°C 30
25°C 4.5 V 1.3 15 Ω
–40°C to 85°C 20
–40°C to 125°C 20
IIH 
IIL		 Control input current VI = 5.5 V or GND 25°C 0 to 5.5 V 0.1 µA
–40°C to 85°C 1
–40°C to 125°C 2
IS(off) OFF-state switch leakage current VI = VCC and VO = GND,
or VI = GND and VO = VCC,
VINH = VIH		 25°C 5.5 V 0.1 µA
–40°C to 85°C 1
–40°C to 125°C 2
IS(on) ON-state switch leakage current VI = VCC or GND,
VINH = VIL
(see Figure4)		 25°C 5.5 V 0.1 µA
–40°C to 85°C 1
–40°C to 125°C 2
ICC Supply current VI = VCC or GND
VINH = 0 V		 25°C 5.5 V 0.01 µA
–40°C to 85°C 20
–40°C to 125°C 40
CIC Control input capacitance f = 10 MHz 25°C 3.3 V 2 pF
COS Switch terminal capacitance f = 10 MHz 25°C 3.3 V 5 pF
CIS Common ternminal capacitance f = 10 MHz 25°C 3.3 V 23 pF
COS(on) Common ternminal ON-capacitance f = 10 MHz 25°C 3.3 V 23 pF
CF Feedthrough capacitance f = 10 MHz 25°C 3.3 V 0.5 pF
CPD Power dissipation capacitance CL = 50 pF, f = 10 MHz 25°C 3.3 V 6 pF