JAJSUV4 June   2024 TMCS1127

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Insulation Specifications
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Accuracy Parameters
      1. 7.1.1 Sensitivity Error
      2. 7.1.2 Offset Error and Offset Error Drift
      3. 7.1.3 Nonlinearity Error
      4. 7.1.4 Power Supply Rejection Ratio
      5. 7.1.5 Common-Mode Rejection Ratio
      6. 7.1.6 External Magnetic Field Errors
    2. 7.2 Transient Response Parameters
      1. 7.2.1 CMTI, Common-Mode Transient Immunity
    3. 7.3 Safe Operating Area
      1. 7.3.1 Continuous DC or Sinusoidal AC Current
      2. 7.3.2 Repetitive Pulsed Current SOA
      3. 7.3.3 Single Event Current Capability
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Input
      2. 8.3.2 Ambient Field Rejection
      3. 8.3.3 High-Precision Signal Chain
        1. 8.3.3.1 Temperature Stability
        2. 8.3.3.2 Lifetime and Environmental Stability
      4. 8.3.4 Internal Reference Voltage
      5. 8.3.5 Current-Sensing Measurable Ranges
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Behavior
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Total Error Calculation Examples
        1. 9.1.1.1 Room-Temperature Error Calculations
        2. 9.1.1.2 Full-Temperature Range Error Calculations
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Device Support
      1. 10.2.1 Development Support
    3. 10.3 Documentation Support
      1. 10.3.1 Related Documentation
    4. 10.4 ドキュメントの更新通知を受け取る方法
    5. 10.5 サポート・リソース
    6. 10.6 Trademarks
    7. 10.7 静電気放電に関する注意事項
    8. 10.8 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.6 Electrical Characteristics

at TA = 25°C, VS = 5V on TMCS1127Axx, VS = 3.3V on TMCS1127Bxx and TMCS1127Cxx (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
INPUT
RIN Input Conductor Resistance IN+ to IN– 0.7 mΩ
RIN Input Conductor Resistance Temperature Drift TA= –40ºC to 125ºC 2.1 μΩ/°C
IIN,MAX Maximum Continuous Input Current(1) TA= 25ºC 80 ARMS
TA= 125ºC 44
OUTPUT
S Sensitivity TMCS1127x1A 25 mV/A
TMCS1127x2A 50
TMCS1127x3A 75
TMCS1127x4A 100
TMCS1127x5A 150
TMCS1127x6A 200
eS Sensitivity Error 0.05V ≤ VOUT ≤ VS − 0.2V ±0.4 ±1.25 %
Sdrift,therm Sensitivity Thermal Drift 0.05V ≤ VOUT ≤ VS − 0.2V, TA = −40°C to 125°C ±40 ±100 ppm/°C
Sdrift, life Sensitivity Lifetime Drift(2) 0.05V ≤ VOUT ≤ VS − 0.2V ±0.2 ±0.5 %
eNL Nonlinearity Error VOUT = 0.1V to VS – 0.1V ±0.2 %
VOUT,0A Zero Current Output Voltage TMCS1127AxA, IIN = 0A 2.5 V
TMCS1127BxA, IIN = 0A 1.65
TMCS1127CxA, IIN = 0A 0.33
VOE Output Voltage Offset Error TMCS1127x1A, IIN = 0A ±0.7 ±2 mV
TMCS1127x2A, IIN = 0A ±0.8 ±2.5
TMCS1127x3A, IIN = 0A ±1 ±3
TMCS1127x4A, IIN = 0A ±1.5 ±4.5
TMCS1127x5A, IIN = 0A ±2 ±6
TMCS1127x6A, IIN = 0A ±2.5 ±7.5
VOE, drift, therm Output Voltage Offset Thermal Drift TMCS1127x1A, IIN = 0A, TA = –40°C to 125°C ±10 ±30 µV/°C
TMCS1127x2A IIN = 0A, TA = –40°C to 125°C ±15 ±40
TMCS1127x3A, IIN = 0A, TA = –40°C to 125°C ±20 ±70
TMCS1127x4A, IIN = 0A, TA = –40°C to 125°C ±30 ±80
TMCS1127x5A, IIN = 0A, TA = –40°C to 125°C ±40 ±100
TMCS1127x6A, IIN = 0A, TA = –40°C to 125°C ±50 ±120
IOS, drift, life Offset Lifetime Drift(2) Input Referred, (VOUT,0A − VREF) / S, IIN = 0A ±12 ±24 mA
PSRR Power Supply Rejection Ratio Input Referred, VS = 3V to 5.5V, TA= –40ºC to 125ºC ±40 ±80 mA/V
CMTI Common Mode Transient Immunity(3) VCM = 1000V, ΔVOUT < 200mV, 1µs 150 kV/µs
CMRR Common Mode Rejection Ratio Input Referred, DC to 60Hz 5 µA/V
CMFR Common Mode Field Rejection Uniform External Magnetic Field, Input Referred, DC to 1kHz 10 mA/mT
Input Noise Density Input Referred, Full Bandwidth 170 μA/√Hz
CL,MAX Maximum Capacitive Load VOUT to GND 4.7 nF
Short Circuit Output Current VOUT short to GND, short to VS 50 mA
SwingVS Swing to VS Power Supply Rail RL = 10kΩ to GND, TA= –40ºC to 125ºC VS – 0.02 VS – 0.05 V
SwingGND Swing to GND 5 10 mV
BANDWIDTH & RESPONSE
BW Analog Bandwidth - 3dB Gain 275 kHz
SR Slew Rate(4) Output rate of change between reaching 10% and 90% of final value as shown in Figure 7-2 with a 100ns input step 3 V/µs
tr Response Time(4) Time between input and output reaching 90% of final values, as shown in Figure 7-2 with a 100ns input step and a 1V output transition 1 µs
tpd Propagation Delay(4) Time between input and output reaching 10% of final values as shown in Figure 7-2 with a 100ns input step and a 1V output transition 110 ns
Current Overload Recovery Time 300 ns
POWER SUPPLY
VS Supply Voltage TA = –40ºC to 125ºC 3.0 5.5 V
IQ Quiescent Current TA = 25ºC 11 14 mA
TA = –40ºC to 125ºC 14.5 mA
Power On Time Time from VS > 3V to valid output 34 ms
(1) Thermally limited by junction temperature. Applies when device mounted on TMCS1127xEVM. For more details, see the Safe Operating Area section.
(2) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details.
(3) Refer to the Common-Mode Transient Immunity section for details on common-mode transient response.
(4) Refer to the Transient Response Parameters section for details of frequency and transient response of the device.