JAJSVC5 September   2024 TMUX1219-Q1

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics (VDD = 5V ±10 %)
    6. 5.6 Electrical Characteristics (VDD = 3.3V ±10 %)
    7. 5.7 Electrical Characteristics (VDD = 1.8V ±10 %)
    8. 5.8 Electrical Characteristics (VDD = 1.2V ±10 %)
    9. 5.9 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 On-Resistance
    2. 6.2 Off-Leakage Current
    3. 6.3 On-Leakage Current
    4. 6.4 Transition Time
    5. 6.5 Break-Before-Make
    6. 6.6 Charge Injection
    7. 6.7 Off Isolation
    8. 6.8 Crosstalk
    9. 6.9 Bandwidth
  8. Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Feature Description
      1. 7.2.1 Bidirectional Operation
      2. 7.2.2 Rail to Rail Operation
      3. 7.2.3 1.8 V Logic Compatible Inputs
      4. 7.2.4 Fail-Safe Logic
    3. 7.3 Device Functional Modes
    4. 7.4 Truth Tables
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Switchable Operational Amplifier Gain Setting
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Input Control for Power Amplifier
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Information
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Electrical Characteristics (VDD = 3.3V ±10 %)

at TA = 25°C, VDD = 3.3V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
ISD = 10 mA
Refer to (1)
25°C 5 Ω
–40°C to +85°C 10 Ω
–40°C to +125°C 12 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
ISD = 10 mA
Refer to (1)
25°C 0.15 Ω
–40°C to +85°C 1 Ω
–40°C to +125°C 1 Ω
RON FLAT On-resistance flatness VS = 0 V to VDD
ISD = 10 mA
Refer to (1)
25°C 3.5 Ω
–40°C to +85°C 4 Ω
–40°C to +125°C 5 Ω
IS(OFF) Source off leakage current(1) VDD = 3.3 V
Switch Off
VD = 3 V / 1 V
VS = 1 V / 3 V
Refer to (1)
25°C ±5 nA
–40°C to +85°C –25 25 nA
–40°C to +125°C –40 40 nA
ID(ON)
IS(ON)
Channel on leakage current VDD = 3.3 V
Switch On
VD = VS = 3 V / 1 V
Refer to (1)
25°C ±15 nA
–40°C to +85°C –50 50 nA
–40°C to +125°C –80 80 nA
LOGIC INPUTS (SEL)
VIH Input logic high –40°C to +125°C 1.35 5.5 V
VIL Input logic low –40°C to +125°C 0 0.8 V
IIH
IIL
Input leakage current 25°C   ±0.005   µA
IIH
IIL
Input leakage current -40°C to 125°C     ±0.05 µA
CIN Logic input capacitance 25°C   1 pF
CIN Logic input capacitance –40°C to +125°C   2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0 V or 5.5 V 25°C 0.003 µA
–40°C to +125°C 0.8 µA
DYNAMIC CHARACTERISTICS
tTRAN Switching time between channels VS = 2 V
RL = 200 Ω, CL = 15 pF
Refer to (1)
25°C   14 ns
–40°C to +85°C     20 ns
–40°C to +125°C     21 ns
tOPEN (BBM) Break before make time VS = 2 V
RL = 200 Ω, CL = 15 pF
Refer to (1)
25°C   9 ns
–40°C to +85°C 1   ns
–40°C to +125°C 1   ns
QC Charge Injection VD = 1 V
RS = 0 Ω, CL = 1 nF
Refer to (1)
25°C   –6   pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to (1)
25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to (1)
25°C   –45   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to (1)
25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to (1)
25°C   –45   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF
Refer to (1)
25°C   250   MHz
CSOFF Source off capacitance f = 1 MHz 25°C   7   pF
CSON
CDON
On capacitance f = 1 MHz 25°C   23   pF
When VS is 3V, VD is 1V or when VS is 1V, VD is 3V.