JAJSVE0C May   2015  – July 2024 UCC27201A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 説明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 UVLO (Under Voltage Lockout)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 サード・パーティ製品に関する免責事項
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

VDD = VHB =12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = –40°C to +150°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IDD VDD quiescent current VLI = VHI = 0 V 0.11 0.8 mA
IDDO VDD operating current f = 500 kHz, CLOAD = 0 1 3 mA
IHB Boot voltage quiescent current VLI = VHI = 0 V 0.065 0.8 mA
IHBO Boot voltage operating current f = 500 kHz, CLOAD = 0 0.9 3 mA
IHBS HB to VSS quiescent current VHS = VHB = 105 V 0.0005 1 μA
IHBSO HB to VSS operating current f = 500 kHz, CLOAD = 0 0.03 mA
INPUT
VHIT Input voltage high threshold 1.9 2.3 2.7 V
VLIT Input voltage low threshold 1.3 1.6 1.9 V
VIHYS Input voltage hysteresis 0.7 V
RIN Input pulldown resistance VIN = 3V 68 kΩ
UNDERVOLTAGE PROTECTION (UVLO)
VDDR VDD rising threshold 6.2 7.1 7.8 V
VDDHYS VDD threshold hysteresis 0.5 V
VHBR VHB rising threshold 5.8 6.7 7.2 V
VHBHYS VHB threshold hysteresis 0.4 V
BOOTSTRAP DIODE
VF Low-current forward voltage I VDD - HB = 100 μA 0.65 0.85 V
VFI High-current forward voltage I VDD - HB = 100 mA 0.85 1.1 V
RD Dynamic resistance, ΔVF/ΔI I VDD - HB = 120 mA and 100 mA 0.65 1 Ω
LO GATE DRIVER
VLOL Low level output voltage ILO = 100 mA 0.1 0.4 V
VLOH High level output voltage ILO = -100 mA, VLOH = VDD – VLO 0.13 0.42 V
Peak pullup current(1) VLO = 0 V 3 A
Peak pulldown current(1) VLO = 12 V 3 A
HO GATE DRIVER
VHOL Low level output voltage IHO = 100 mA 0.1 0.4 V
VHOH High level output voltage IHO = –100 mA, VHOH = VHB- VHO 0.13 0.42 V
Peak pullup current(1) VHO = 0 V 3 A
Peak pulldown current(1) VHO = 12 V 3 A
(1) Parameter not tested in production.