JAJSVJ3 October   2024 ESD701

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings -JEDEC Specifications
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Application and Implementation
    1. 6.1 Application Information
  8. 7 Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 ドキュメントの更新通知を受け取る方法
    3. 7.3 サポート・リソース
    4. 7.4 Trademarks
    5. 7.5 静電気放電に関する注意事項
    6. 7.6 用語集
  9. 8 ドキュメントの更新通知を受け取る方法
  10. 9 サポート・リソース
  11. 10Trademarks
  12. 11静電気放電に関する注意事項
  13. 12用語集
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 10 nA -24 24 V
ILEAK Leakage current at VRWM VIO = ±24 V, I/O to GND 2 10 nA
VBR Breakdown voltage, I/O to GND (1) IIO = ±10 mA 25.5 35.5 V
VHOLD Holding voltage (2) TLP, IO to GND or GND to IO 31
VCLAMP Surge clamping voltage, tp = 8/20 µs (3) IPP = 3 A, I/O to GND 37 V
VCLAMP Surge clamping voltage, tp = 8/20 µs (3) IPP = 3 A, GND to I/O 37 V
VCLAMP TLP clamping voltage, tp = 100 ns (4) IPP = 16 A (100 ns TLP), I/O to GND 41 V
VCLAMP TLP clamping voltage, tp = 100 ns (4) IPP = 16 A (100 ns TLP), GND to I/O 41 V
RDYN Dynamic resistance (5) I/O to GND 0.84 Ω
GND to I/O 0.84
CLINE Line capacitance, IO to GND VIO = 0 V, f = 1 MHz 0.3 0.5 pF
(1) VBR is defined as the voltage obtained at 1 mA when sweeping the voltage up, before the device latches into the snapback state
(2) VHOLD is defined as the voltage when 1 mA is applied, after the device has successfully latched into the snapback state.
(3) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5
(4) Non-repetitive square wave current pulse, Transmission Line Pulse (TLP);  ANSI / ESD STM5.5.1-2008
(5) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A